SIT8021AI-J4-18S-19.200000

SiT8021 1 to 26 MHz, Ultra-Small µPower Oscillator Description Features The SiT8021 is the industry's smallest and the lowest power MHz oscillator. With 0.1 mW of active power consumption at 3.072 MHz output frequency, this µPower oscillator enables longer battery life for a wearable, IoT or mobile device compared to a quartz-based oscillator or resonator. Ultra-low current consumption of 60 µA at 3.072 MHz Ultra-small 1.5 mm x 0.8 mm package 1 to 26 MHz with 6 decimal places of accuracy Operating temperature from -40°C to 85°C Frequency stability as low as ±100 ppm Programmable output drive strength for best EMI or driving multiple loads Ultra-light weight of 1.28 mg RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free The device comes in the smallest 1.5 mm x 0.8 mm package. The unique combination of ultra-low power, ultrasmall package and flexible output frequency makes it ideal for power sensitive and space constrained applications. Applications Tablets Fitness bands Health and medical monitoring Wearables Portable audio Input devices IoT devices Electrical Specifications Table 1. Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage. Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1.000000 26.000000 MHz Frequency Stability and Aging Initial Tolerance Frequency Stability First Year Aging f_tol -15 – +15 ppm Frequency offset at 25°C post reflow f_stab -100 – +100 ppm Inclusive of initial tolerance, and variations over operating temperature, rated power supply voltage and output load. Contact SiTime for ±25 or ±50 ppm options. f_1year -3 +3 ppm at 25°C Operating Temperature Range Operating Temperature Range T_use -20 – +70 °C Extended Commercial -40 – +85 °C Industrial. Contact SiTime for -40°C to 105°C option. Supply Voltage and Current Consumption Supply Voltage Current Consumption[1,3] Standby Current[3] Rev 1.2 VDD IDD I_std 1.62 1.8 1.98 2.25 – 3.63 V Any voltage from 2.25 to 3.63V – 60 – µA f = 3.072 MHz, Vdd = 1.8V, no load – 110 130 µA f = 6.144 MHz, Vdd = 1.8V, no load – 230 270 µA f = 6.144 MHz, Vdd = 1.8V, 10 pF load – – 160 µA f = 6.144 MHz, Vdd = 2.25V to 3.63V, no load – 160 – µA f = 12 MHz, Vdd = 1.8V, no load – 0.7 1.3 µA Vdd = 1.8V, ST pin = HIGH, output is weakly pulled down – – 1.5 µA Vdd = 2.25V to 3.63V, ST pin = HIGH, output is weakly pulled down September 28, 2017 V www.sitime.com SiT8021 1 to 26 MHz, Ultra-Small µPower Oscillator Table 1. Electrical Characteristics (continuous) Parameters Symbol Min. Typ. Max. Unit Condition LVCMOS Output Characteristics Duty Cycle DC Rise/Fall Time[3] 45 – 55 % – 4 8 ns Vdd = 1.8V, 20% - 80%. Contact SiTime for other programmable rise/fall options – – 8 ns Vdd = 2.25V to 3.63V, 20% - 80%. Contact SiTime for other programmable rise/fall options 90% – – VDD IOH = -0.5 mA (Vdd = 1.8V) IOH = -1.2 mA (Vdd = 2.25V to 3.63V) – – 10% VDD IOL = 0.5 mA (Vdd = 1.8V) IOL = 1.2 mA (Vdd = 2.25V to 3.63V) T_r, T_f Output High Voltage VOH Output Low Voltage VOL Input High Voltage VIH 80% – – VDD Input Low Voltage VIL – – 20% VDD Input Slew Rate In-slew 10 – – V/µs Input Pull-down Impedance Z_in 300 – – kΩ Active mode (ST pin = LOW), Vdd = 1.8V 270 – – kΩ Active mode (ST pin = LOW), Vdd = 2.25V to 3.63V 2.5 – – MΩ Standby mode (ST pin = HIGH), Vdd = 1.8V 1.3 – – MΩ Standby mode (ST pin = HIGH), Vdd = 2.25V to 3.63V Input Characteristics Startup, Standby and Resume Timing Startup Time T_start – 75 150 ms Measured from the time VDD reaches 90% of its final value Standby Time T_stdby – – 20 µs Measured from the time ST pin crosses 50% threshold Resume Time T_resume – 2 3 ms Measured from the time ST pin crosses 50% threshold Jitter RMS Period Jitter[3] T_jitt RMS Phase Jitter[3] T_phj – 75 110 ps f = 6.144 MHz, Vdd = 1.8V – – 110 ps f = 6.144 MHz, Vdd = 2.25V to 3.63V – 0.8 2.5 ns f = 6.144 MHz, Vdd = 1.8V, Integration bandwidth = 100 Hz to 40 kHz[2] – – 2.5 ns f = 6.144 MHz, Vdd = 2.25V to 3.63V, Integration bandwidth = 100 Hz to 40 kHz[2] Notes: 1. Current consumption with load is a function of the output frequency and output load. For any given output frequency, the capacitive loading will increase current consumption equal to C_load*VDD*f(MHz). 2. Max spec inclusive of 25 mV peak-to-peak sinusoidal noise on VDD. Noise frequency 100 Hz to 20 MHz. 3. Refer to the performance plot section for typical values at 2.5, 2.8, 3.0 and 3.3V condition Top View Table 2. Pin Description Pin Symbol Functionality L: Specified frequency output 1 ST Input 2 OUT Output LVCMOS clock output 3 VDD Power Supply voltage. Bypass with a 0.01µF X7R capacitor. 4 GND Power Connect to ground Rev 1.2 ST 1 4 GND OUT 2 3 VDD H: Output is low (weak pull down). Device goes to the standby mode. Supply current reduces to I_std. Figure 1. Pin Assignments Page 2 of 10 www.sitime.com SiT8021 1 to 26 MHz, Ultra-Small µPower Oscillator Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Test Condition Continuous Power Supply Voltage Range (VDD) Short Duration Maximum Power Supply Voltage (VDD) Value Unit -0.5 to 3.63 V