SIT1566AC-JE-18E-32.768E 数据手册
SiT1566
1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
Smallest (1.2mm2), Ultra-Low Power, 32.768 kHz MEMS TCXO
Features
Applications
32.768 kHz ±3 and ±5 ppm all-inclusive frequency stability
2
World’s smallest TCXO Footprint: 1.2 mm
1.5 x 0.8 mm CSP
No external bypass cap required
Improved stability reduces system power with fewer network
timekeeping updates
Low integrated phase jitter (IPJ) suitable for multiplying up for
portable audio: 2.5 nsRMS
Ultra-low power: 4.5 µA
Operating supply voltage range: 1.62 V to 3.63 V
Operating temperature ranges: -20°C to +70°C, -40°C to +85°C
Pb-free, RoHS and REACH compliant
Smart watches, health and wellness monitors
Ultra-accurate RTC reference clock
Smart utility meters, E-meters
Internet-of-Things (IoT) with BLE
Electrical Specifications
Conditions: Min/Max limits are over temperature, Vdd = 1.8V ±10%, unless otherwise stated. Typicals are at 25°C and Vdd = 1.8V.
Table 1. Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency and Stability
Output Frequency
Total Frequency Stability[1]
Allan Deviation
First Year Frequency Aging
Fout
32.768
kHz
-3
3
-5
5
F_stab
ppm
AD
1e-8
F_aging
4e-8
±1
All inclusive, 1.62V to 3.63V
1 second averaging time
ppm
TA = 25°C, Vdd = 1.8V
Jitter and Frequency Response Performance
Integrated Phase Jitter
RMS Period Jitter
Peak-to-Peak Period Jitter
2.5
nsRMS
2.5
4
nsRMS
20
35
nsp-p
+0.5
ppm/sec
IPJ
1.8
PJRMS
PJp-p
Dynamic Temperature
Frequency Response
-0.5
Integration bandwidth = 100 Hz to 16.384 kHz.
Inclusive of 50 mV peak-to-peak sinusoidal noise on Vdd.
Noise frequency 100 Hz to 20 MHz.
10,000 samples, per JEDEC standard 65B
Under temp ramp up to 1.5°C/sec
Supply Voltage and Current Consumption
Operating Supply Voltage
Vdd
Supply Current
Idd
Start-up Time at Power-up
1.62
1.8
1.62
1.98
V
3.63
4.5
t_start
5.3
µA
No load
300
ms
Measured when supply reaches 90% of final Vdd to the first
output pulse.
Operating Temperature Range
Operating Temperature Range
Op_Temp
-20
70
°C
“C” ordering code
-40
85
°C
“I” ordering code
LVCMOS Output
Output Rise/Fall Time
tr, tf
Output Clock Duty Cycle
DC
45
9
Output Voltage High
VOH
90%
Output Voltage Low
VOL
20
ns
55
%
10%
10 – 90% Vdd, 15pF load
Vdd
IOH = -50 µA, 15 pF load
Vdd
IOL = 50 µA, 15 pF load
Note:
1. Relative to 32.768 kHz, includes initial tolerance, over temp stability, Vdd, 20% load variation, hysteresis, board -level underfill (5 ppm only), 2x reflow.
Tested with Agilent 53132A frequency counter. Measured with 100 ms gate time for accurate frequency measurement.
Rev 1.01
January 16, 2019
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SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
Table 2. Pin Configuration
Pin
Symbol
I/O
1
NC
Internal Test
2
CLK Out
OUT
3
4
CSP Package (Top View)
Functionality
Leave Floating. Do not connect to GND.
NC
1
4
GND
CLK Out
2
3
Vdd
Oscillator clock output. LVCMOS compatible logic.
1.8V ±10% power supply. Under normal operating conditions,
Vdd does not require external bypass/decoupling capacitor(s).
SiT1566 includes on-chip filtering capacitors.
Under extreme noise on the supply, a 10-100 nF low ESR ceramic
bypass capacitor may be recommended close to the Vdd pin.
Vdd
Power Supply
GND
Power Supply Ground
Connect to ground.
Figure 1. Pin Assignment
Table 3. Absolute Maximum Ratings
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameters
Test Conditions
Value
Continuous Power Supply Voltage Range (Vdd)
Unit
-0.5 to 4.0
V
105
°C
Continuous Maximum Operating Temperature Range
≤ 30 minutes
125
°C
Human Body Model (HBM) ESD Protection
JESD22-A114
2000
V
Charge-Device Model (CDM) ESD Protection
JESD22-C101
750
V
TA = 25°C
200
V
g
Short Duration Maximum Operating Temperature Range
Machine Model (MM) ESD Protection
Latch-up Tolerance
JESD78 Compliant
Mechanical Shock Resistance
Mil 883, Method 2002
20,000
Mechanical Vibration Resistance
Mil 883, Method 2007
70
g
150
°C
-65 to 150
°C
1508 CSP Junction Temperature
Storage Temperature
System Block Diagram
MEMS Resonator
Control
GND
Temp
Control
Regulators
Temp-to-Digital
Prog
NC
Sustaining
Amp
Ultra-low
Power
Frac-n
PLL
Divider
Vdd
NVM
Prog
Driver
CLK Out
Figure 2. SiT1566 Block Diagram
Rev 1.01
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SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
Description
SiT1566 is an ultra-small, micro-power 32.768 kHz TCXO
optimized for battery-powered applications. SiTime’s silicon
MEMS technology enables the first 32 kHz TCXO in the
world’s smallest footprint and chip-scale packaging (CSP).
Typical supply current is 4.5 µA under no load condition.
SiTime's MEMS oscillator consists of a MEMS resonator
and a programmable analog circuit. SiT1566 MEMS
resonator is built with SiTime’s unique MEMS First™
process. A key manufacturing step is EpiSeal™ during
which the MEMS resonator is annealed with temperatures
over 1000°C. EpiSeal creates an extremely strong, clean,
vacuum chamber that encapsulates the MEMS resonator
and ensures the best performance and reliability. During
EpiSeal, a poly silicon cap is grown on top of the resonator
cavity, which eliminates the need for additional cap wafers
or other exotic packaging. As a result, SiTime’s MEMS
resonator die can be used like any other semiconductor
die. One unique result of SiTime’s MEMS First and EpiSeal
manufacturing processes is the capability to integrate
SiTime’s MEMS die with a SOC, ASIC, microprocessor or
analog die within a package to eliminate external timing
components and provide a highly integrated, smaller,
cheaper solution to the customer.
Dynamic Temperature Frequency
Response
Dynamic Temperature Frequency Response is the rate of
frequency change during temperature ramps. This is an
important performance metric when the oscillator is
mounted near a high power component (e.g. SoC or power
management) that may rapidly change the temperature of
surrounding components.
For moderate temperature ramp rates (5°C/sec), the latency in
the temperature compensation loop contributes a larger
frequency error, which is dependent on the temperature
compensation update rate. This part achieves excellent
performance at the default 3 Hz refresh update rate. This
device family supports faster update rates for further
reducing dynamic frequency error at the expense of slightly
increased current consumption. Other compensation
refresh rate options include 6 Hz, 12 Hz, and 24 Hz.
Contact SiTime for other options.
TCXO Frequency Stability
SiT1566 is factory calibrated (trimmed) over multiple
temperature points to guarantee extremely tight stability
over temperature. Unlike quartz crystals that have a
classic tuning fork parabola temperature curve with a
2
25°C turnover point with a 0.04 ppm/C temperature
coefficient, the SiT1566 temperature coefficient is
calibrated and corrected over temperature with an active
temperature correction circuit. The result is a 32 kHz
TCXO with extremely tight frequency variation over the
-40°C to +85°C temperature range.
When measuring the output frequency of SiT1566 with a
frequency counter, it is important to make sure the
counter's gate time is >100 ms. Shorter gate times may
lead to inaccurate measurements.
Rev 1.01
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SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
Typical Operating Curves
(TA = 25°C, Vdd = 1.8V, unless otherwise stated)
Figure 3. Frequency Stability over Temperature
Figure 4. Supply Current over Temperature (No Load)
FOUT = 33 kHz
Internal Caps Charging
No Vdd bypass
Logic Start-up
NVM Read
OSC Start-up
Temperature
Compensation (13 µA)
Steady State
4.5
10 nF Vdd bypass
350ms
33 kHz
Figure 6. Power Supply Noise Rejection (PSNR)
Figure 5. Start-up and Steady-State Current Profile
Figure 7. LVCMOS Output Sing
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SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
[2]
Dynamic Frequency Response for Moderate Temperature Ramps
Note:
2. Measured relative to 32.768 kHz.
Frequency accuracy under a moderate temperature ramp
up to 2°C/sec is limited by the TCXO’s trimmed accuracy
of the frequency stability over-temperature.
Rev 1.01
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SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
Dynamic Frequency Response for Fast Temperature Ramps
5°C/sec Temp Ramp Frequency Response
10°C/sec Temp Ramp Frequency Response
~10°C/sec
[3]
[3]
~5°C/sec
3 Hz Temp Comp
Refresh Rate
3 Hz Temp Comp
Refresh Rate
Note:
3. Measured relative to 32.768 kHz.
For temperature ramps >5°C/sec, the frequency accuracy
is limited by the update rate of the temperature
compensation path (see the 5°C/sec and 10°C/sec plots
above).
Contact SiTime for applications that require improved
dynamic performance.
Rev 1.01
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SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)
Recommended Land Pattern (Unit: mm)
#4
#1
#3
#2
(soldermask openings shown with
dashed line around NSMD pad)
Recommended 4-mil (0.1mm) stencil thickness
Manufacturing Guidelines
1. No Ultrasonic or Megasonic cleaning: Do not subject SiT1566 to an ultrasonic or megasonic cleaning environment.
Permanent damage or long term reliability issues may occur.
2. Applying board-level underfill and overmold is acceptable and will not impact the reliability of the device.
3. Reflow profile, per JESD22-A113D.
4. The SiT1566 CSP includes a protective, opaque polymer top-coat. If the SiT1566 will see intense light, especially in
the 1.0-1.2µm IR spectrum, we recommend a protective “glob-top” epoxy or other cover to keep the light from
negatively impacting the frequency stability.
5. For additional manufacturing guidelines and marking/tape-reel instructions, refer to SiTime Manufacturing Notes.
Rev 1.01
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SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
Ordering Information
SiT1566AI-JE-18E-32.768S
Part Family
Packaging
“SiT1566”
“S”: 8 mm Tape & Reel, 10ku reel
“D”: 8 mm Tape & Reel, 3ku reel
“E”: 8 mm Tape & Reel, 1ku reel
Revision Letter
“A”: is the revision
Samples in cut Tape
Temperature Range
“C”: Extended Commercial, -20 to 70ºC
“I”: lndustrial, -40 to 85ºC
Output Clock Frequency (kHz)
Package Size
Supply Voltage
32.768 kHz
“J”: 1.5 mm x 0.8 mm CSP
XX = 1.8V – 3.3V
1.8V = 18
2.0V = 20
2.5V = 25
3.0V = 30
3.3V = 33
All-Inclusive Over Temp Stability
“V”: ±3 ppm
“E”: ±5 ppm
Rev 1.01
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SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO
Table 4. Revision History
Version
Release Date
0.1
06/30/2015
Advanced datasheet initial release
Change Summary
0.7
03/11/2016
Preliminary datasheet initial release
1.0
03/15/2018
Production Datasheet Release, added ±3ppm option
Updated logo and company address, other page layout changes
1.01
01/16/2019
Updated the frequency stability specification in Table 1, Electrical Characteristics, to be valid for 1.62V to 3.63V.
SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439
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or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect
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