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SIT1566AC-JE-18E-32.768E

SIT1566AC-JE-18E-32.768E

  • 厂商:

    SITIME(赛特时脉)

  • 封装:

    CSP1508_4P

  • 描述:

    有源晶振 1.8V ±5ppm CSP1508_4P 32.768KHz

  • 数据手册
  • 价格&库存
SIT1566AC-JE-18E-32.768E 数据手册
SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO Smallest (1.2mm2), Ultra-Low Power, 32.768 kHz MEMS TCXO Features    Applications 32.768 kHz ±3 and ±5 ppm all-inclusive frequency stability 2 World’s smallest TCXO Footprint: 1.2 mm  1.5 x 0.8 mm CSP  No external bypass cap required Improved stability reduces system power with fewer network timekeeping updates  Low integrated phase jitter (IPJ) suitable for multiplying up for portable audio: 2.5 nsRMS  Ultra-low power: 4.5 µA  Operating supply voltage range: 1.62 V to 3.63 V  Operating temperature ranges: -20°C to +70°C, -40°C to +85°C  Pb-free, RoHS and REACH compliant  Smart watches, health and wellness monitors  Ultra-accurate RTC reference clock  Smart utility meters, E-meters  Internet-of-Things (IoT) with BLE Electrical Specifications Conditions: Min/Max limits are over temperature, Vdd = 1.8V ±10%, unless otherwise stated. Typicals are at 25°C and Vdd = 1.8V. Table 1. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Condition Frequency and Stability Output Frequency Total Frequency Stability[1] Allan Deviation First Year Frequency Aging Fout 32.768 kHz -3 3 -5 5 F_stab ppm AD 1e-8 F_aging 4e-8 ±1 All inclusive, 1.62V to 3.63V 1 second averaging time ppm TA = 25°C, Vdd = 1.8V Jitter and Frequency Response Performance Integrated Phase Jitter RMS Period Jitter Peak-to-Peak Period Jitter 2.5 nsRMS 2.5 4 nsRMS 20 35 nsp-p +0.5 ppm/sec IPJ 1.8 PJRMS PJp-p Dynamic Temperature Frequency Response -0.5 Integration bandwidth = 100 Hz to 16.384 kHz. Inclusive of 50 mV peak-to-peak sinusoidal noise on Vdd. Noise frequency 100 Hz to 20 MHz. 10,000 samples, per JEDEC standard 65B Under temp ramp up to 1.5°C/sec Supply Voltage and Current Consumption Operating Supply Voltage Vdd Supply Current Idd Start-up Time at Power-up 1.62 1.8 1.62 1.98 V 3.63 4.5 t_start 5.3 µA No load 300 ms Measured when supply reaches 90% of final Vdd to the first output pulse. Operating Temperature Range Operating Temperature Range Op_Temp -20 70 °C “C” ordering code -40 85 °C “I” ordering code LVCMOS Output Output Rise/Fall Time tr, tf Output Clock Duty Cycle DC 45 9 Output Voltage High VOH 90% Output Voltage Low VOL 20 ns 55 % 10% 10 – 90% Vdd, 15pF load Vdd IOH = -50 µA, 15 pF load Vdd IOL = 50 µA, 15 pF load Note: 1. Relative to 32.768 kHz, includes initial tolerance, over temp stability, Vdd, 20% load variation, hysteresis, board -level underfill (5 ppm only), 2x reflow. Tested with Agilent 53132A frequency counter. Measured with 100 ms gate time for accurate frequency measurement. Rev 1.01 January 16, 2019 www.sitime.com SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO Table 2. Pin Configuration Pin Symbol I/O 1 NC Internal Test 2 CLK Out OUT 3 4 CSP Package (Top View) Functionality Leave Floating. Do not connect to GND. NC 1 4 GND CLK Out 2 3 Vdd Oscillator clock output. LVCMOS compatible logic. 1.8V ±10% power supply. Under normal operating conditions, Vdd does not require external bypass/decoupling capacitor(s). SiT1566 includes on-chip filtering capacitors. Under extreme noise on the supply, a 10-100 nF low ESR ceramic bypass capacitor may be recommended close to the Vdd pin. Vdd Power Supply GND Power Supply Ground Connect to ground. Figure 1. Pin Assignment Table 3. Absolute Maximum Ratings Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameters Test Conditions Value Continuous Power Supply Voltage Range (Vdd) Unit -0.5 to 4.0 V 105 °C Continuous Maximum Operating Temperature Range ≤ 30 minutes 125 °C Human Body Model (HBM) ESD Protection JESD22-A114 2000 V Charge-Device Model (CDM) ESD Protection JESD22-C101 750 V TA = 25°C 200 V g Short Duration Maximum Operating Temperature Range Machine Model (MM) ESD Protection Latch-up Tolerance JESD78 Compliant Mechanical Shock Resistance Mil 883, Method 2002 20,000 Mechanical Vibration Resistance Mil 883, Method 2007 70 g 150 °C -65 to 150 °C 1508 CSP Junction Temperature Storage Temperature System Block Diagram MEMS Resonator Control GND Temp Control Regulators Temp-to-Digital Prog NC Sustaining Amp Ultra-low Power Frac-n PLL Divider Vdd NVM Prog Driver CLK Out Figure 2. SiT1566 Block Diagram Rev 1.01 Page 2 of 9 www.sitime.com SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO Description SiT1566 is an ultra-small, micro-power 32.768 kHz TCXO optimized for battery-powered applications. SiTime’s silicon MEMS technology enables the first 32 kHz TCXO in the world’s smallest footprint and chip-scale packaging (CSP). Typical supply current is 4.5 µA under no load condition. SiTime's MEMS oscillator consists of a MEMS resonator and a programmable analog circuit. SiT1566 MEMS resonator is built with SiTime’s unique MEMS First™ process. A key manufacturing step is EpiSeal™ during which the MEMS resonator is annealed with temperatures over 1000°C. EpiSeal creates an extremely strong, clean, vacuum chamber that encapsulates the MEMS resonator and ensures the best performance and reliability. During EpiSeal, a poly silicon cap is grown on top of the resonator cavity, which eliminates the need for additional cap wafers or other exotic packaging. As a result, SiTime’s MEMS resonator die can be used like any other semiconductor die. One unique result of SiTime’s MEMS First and EpiSeal manufacturing processes is the capability to integrate SiTime’s MEMS die with a SOC, ASIC, microprocessor or analog die within a package to eliminate external timing components and provide a highly integrated, smaller, cheaper solution to the customer. Dynamic Temperature Frequency Response Dynamic Temperature Frequency Response is the rate of frequency change during temperature ramps. This is an important performance metric when the oscillator is mounted near a high power component (e.g. SoC or power management) that may rapidly change the temperature of surrounding components. For moderate temperature ramp rates (5°C/sec), the latency in the temperature compensation loop contributes a larger frequency error, which is dependent on the temperature compensation update rate. This part achieves excellent performance at the default 3 Hz refresh update rate. This device family supports faster update rates for further reducing dynamic frequency error at the expense of slightly increased current consumption. Other compensation refresh rate options include 6 Hz, 12 Hz, and 24 Hz. Contact SiTime for other options. TCXO Frequency Stability SiT1566 is factory calibrated (trimmed) over multiple temperature points to guarantee extremely tight stability over temperature. Unlike quartz crystals that have a classic tuning fork parabola temperature curve with a 2 25°C turnover point with a 0.04 ppm/C temperature coefficient, the SiT1566 temperature coefficient is calibrated and corrected over temperature with an active temperature correction circuit. The result is a 32 kHz TCXO with extremely tight frequency variation over the -40°C to +85°C temperature range. When measuring the output frequency of SiT1566 with a frequency counter, it is important to make sure the counter's gate time is >100 ms. Shorter gate times may lead to inaccurate measurements. Rev 1.01 Page 3 of 9 www.sitime.com SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO Typical Operating Curves (TA = 25°C, Vdd = 1.8V, unless otherwise stated) Figure 3. Frequency Stability over Temperature Figure 4. Supply Current over Temperature (No Load) FOUT = 33 kHz Internal Caps Charging No Vdd bypass Logic Start-up NVM Read OSC Start-up Temperature Compensation (13 µA) Steady State 4.5 10 nF Vdd bypass 350ms 33 kHz Figure 6. Power Supply Noise Rejection (PSNR) Figure 5. Start-up and Steady-State Current Profile Figure 7. LVCMOS Output Sing Rev 1.01 Page 4 of 9 www.sitime.com SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO [2] Dynamic Frequency Response for Moderate Temperature Ramps Note: 2. Measured relative to 32.768 kHz. Frequency accuracy under a moderate temperature ramp up to 2°C/sec is limited by the TCXO’s trimmed accuracy of the frequency stability over-temperature. Rev 1.01 Page 5 of 9 www.sitime.com SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO Dynamic Frequency Response for Fast Temperature Ramps 5°C/sec Temp Ramp Frequency Response 10°C/sec Temp Ramp Frequency Response ~10°C/sec [3] [3] ~5°C/sec 3 Hz Temp Comp Refresh Rate 3 Hz Temp Comp Refresh Rate Note: 3. Measured relative to 32.768 kHz. For temperature ramps >5°C/sec, the frequency accuracy is limited by the update rate of the temperature compensation path (see the 5°C/sec and 10°C/sec plots above). Contact SiTime for applications that require improved dynamic performance. Rev 1.01 Page 6 of 9 www.sitime.com SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO Dimensions and Patterns Package Size – Dimensions (Unit: mm) Recommended Land Pattern (Unit: mm) #4 #1 #3 #2 (soldermask openings shown with dashed line around NSMD pad) Recommended 4-mil (0.1mm) stencil thickness Manufacturing Guidelines 1. No Ultrasonic or Megasonic cleaning: Do not subject SiT1566 to an ultrasonic or megasonic cleaning environment. Permanent damage or long term reliability issues may occur. 2. Applying board-level underfill and overmold is acceptable and will not impact the reliability of the device. 3. Reflow profile, per JESD22-A113D. 4. The SiT1566 CSP includes a protective, opaque polymer top-coat. If the SiT1566 will see intense light, especially in the 1.0-1.2µm IR spectrum, we recommend a protective “glob-top” epoxy or other cover to keep the light from negatively impacting the frequency stability. 5. For additional manufacturing guidelines and marking/tape-reel instructions, refer to SiTime Manufacturing Notes. Rev 1.01 Page 7 of 9 www.sitime.com SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO Ordering Information SiT1566AI-JE-18E-32.768S Part Family Packaging “SiT1566” “S”: 8 mm Tape & Reel, 10ku reel “D”: 8 mm Tape & Reel, 3ku reel “E”: 8 mm Tape & Reel, 1ku reel Revision Letter “A”: is the revision Samples in cut Tape Temperature Range “C”: Extended Commercial, -20 to 70ºC “I”: lndustrial, -40 to 85ºC Output Clock Frequency (kHz) Package Size Supply Voltage 32.768 kHz “J”: 1.5 mm x 0.8 mm CSP XX = 1.8V – 3.3V 1.8V = 18 2.0V = 20 2.5V = 25 3.0V = 30 3.3V = 33 All-Inclusive Over Temp Stability “V”: ±3 ppm “E”: ±5 ppm Rev 1.01 Page 8 of 9 www.sitime.com SiT1566 1.2 mm2 µPower, Low-Jitter, 3 & 5 ppm, 32.768 kHz Super-TCXO Table 4. Revision History Version Release Date 0.1 06/30/2015 Advanced datasheet initial release Change Summary 0.7 03/11/2016 Preliminary datasheet initial release 1.0 03/15/2018 Production Datasheet Release, added ±3ppm option Updated logo and company address, other page layout changes 1.01 01/16/2019 Updated the frequency stability specification in Table 1, Electrical Characteristics, to be valid for 1.62V to 3.63V. SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439 © SiTime Corporation 2015-2019. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. Rev 1.01 Page 9 of 9 www.sitime.com
SIT1566AC-JE-18E-32.768E 价格&库存

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