SRV05-4
Ultra Low Capacitance ESD Protection Array
DESCRIPTION
SRV05-4 a low capacitance of 0.4pF
maximum and operates with virtually no insertion
loss to 1GHz. This makes the device ideal for
protection of high-speed data lines such as USB
2.0, Firewire, DVI, and gigabit Ethernet
interfaces.
The
low
capacitance
array
configuration allows the user to protect four
high-speed data or transmission lines. The low
inductance construction minimizes voltage
overshoot during high current surges. They may
be used to meet the ESD immunity requirements
of IEC61000-4-2, Level 4 (±15kV air, ±8kV
contact discharge).
This device has been specifically designed to
protect sensitive components which are
connected to high-speed data and transmission
lines from overvoltage caused by ESD
(electrostatic discharge), CDE (Cable Discharge
Events),and lightning.
FEATURES
Protects four I/O lines and one Vcc line
Low capacitance
Working voltages : 5V
Low leakage current
Low capacitance for high-speed interfaces
No insertion loss to 2.0GHz
Response Time is < 1 ns
Solid-state silicon avalanche technology
ROHS compliant
MACHANICAL DATA
Flammability Rating: UL 94V-0
Terminal: Matte tin plated.
Packaging: Tape and Reel
High temperature soldering guaranted:260℃/10s
Reel size: 7 inch
ORDERING INFORMATION
APPLICATIONS
Device: SRV05-4
Package: SOT-163
Material: Halogen free
Packing: Tape & Reel
Quantity per reel: 3,000pcs
Digital Visual Interface (DVI)
USB 1.1/2.0/OTG
IEEE 1394 Firewire Ports
Notebooks & Handhelds
Projection TV & Monitors
Set-top box
Flat Panel Displays
PCI Express
PIN CONFIGURATION
PACKAGE OUTLINE
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SRV05-4
Ultra Low Capacitance ESD Protection Array
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Units
PPk
Peak Pulse Power (8/20μs)
150
W
IPP
Peak Pulse Current (8/20μs)
5
A
±15
±8
kV
VESD
ESD per IEC 61000-4-2 (Air)
ESD per IEC 61000-4-2 (Contact)
TOPT
Operating Temperature
-55/+150
°C
TSTG
Storage Temperature
-55/+150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Symbol
Parameter
Test Condition
VRWM
Reverse Working Voltage
Any I/O pin to GND
VBR
Reverse Breakdown
Voltage
IR
Reverse Leakage Current
IT = 1mA
Any I/O pin to GND
VRWM = 5V
Any I/O pin to GND
VF
Diode Forward Voltage
VC1
Min
Typ
Max
Units
5.0
V
6.0
V
1
μA
IF = 15mA
1.2
V
Clamping Voltage 1
IPP = 1A, tp = 8/20μs
Any I/O pin to GND
15
V
VC2
Clamping Voltage 2
IPP = 5A, tp = 8/20μs
Any I/O pin to GND
28
V
CJ1
Junction Capacitance 1
0.4
pF
CJ2
Junction Capacitance 2
0.8
pF
VR = 0V, f = 1MHz
Between I/O pins
VR = 0V, f = 1MHz
Any I/O pin to GND
Note: I/O pins are pin 1,3,4,6.
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SRV05-4
Ultra Low Capacitance ESD Protection Array
ELECTRICAL CHARACTERISTICS CURVE
3/4
SRV05-4
Ultra Low Capacitance ESD Protection Array
PACKAGE OUTLINE DIMENSIONS
Symbol
Dimensions In Millimeters
Min
Max
Dimensions In Inches
Min
Max
A
1.050
1.250
A1
0.000
0.100
A2
1.050
1.150
0.041
0.045
b
0.300
0.500
0.012
0.020
c
0.100
0.200
0.004
0.008
D
2.820
3.020
0.111
0.119
E
1.500
1.700
0.059
0.067
E1
2.650
2.950
0.104
0.116
e
0.041
0.049
0.004
0,950(BSC)
0.037(BSC)
e1
1.800
2.000
0.071
0.079
L
0.300
0.600
0.012
0.024
0°
8°
0°
8°
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