SI2305

SI2305 MOSFET P-Channel MOSFET ROHS SOT-23 - Features  Advanced trench process technology  High Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics ℃ (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Symbol Limit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 ID -4.1 IDM -15 Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation TA = 25o 2) o TA = 75 C Junction-to-Ambient Thermal Resistance (PCB mounted) W o -55 to 150 C 100 RthJA 3) A 0.8 2) Junction-to-Ambient Thermal Resistance (PCB mounted) V 1.25 PD TJ, Tstg Operating Junction and Storage Temperature Range Unit o C/W 166 Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) Surface Mounted on FR4 Board. Electrical Characteristics ( Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Symbol Test Condition Min. VGS = 0V, ID = -250uA -20 Typ. Max. Unit Static Drain-Source Breakdown Voltage BVDSS 1) Drain-Source On-State Resistance Gate Threshold Voltage R DS(on) VGS(th) Zero Gate Voltage Drain Current 0 IDSS VGS = -4.5V, ID = -4.1A 46 52 VGS = -2.5V, ID = -3.0A 60 75 mΩ VDS =VGS, ID = -250uA 0.4 Forward Transconductance 1) 1 VDS = -20V, V GS = 0V IGSS VGS = ± 12V, V DS = 0V gfs VDS = -5V, ID = -3.5A V -1 uA o VDS = -20V, V GS = 0V TJ=55 Gate Body Leakage V C -10 ±100 6.5 nA S Dynamic Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 5.8 VDS = -6V, ID ^ -3.5A 10 nC 0.85 VGS = -4.5V 1.7 13 25 36 60 42 70 34 60 VDD = -6V, RL=6Ω Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Input Capacitance Ciss ID ^ -1.A, VGEN = -4.5V RG = 6 Ω ns 415 VDS = -6V, VGS = 0V Output Capacitance Coss pF 223 f = 1.0 MHz Reverse Transfer Capacitance 87 Crss Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = -1.6A, VGS = 0V -0.8 -1.6 A -1.2 V 1) Pulse test: pulse width