BAT54C

BAT54xx Series SWITCHING SCHOTTKY Schottky Barrier Diode ROHS SOT-23 - Features  Extremely Fast Switching Speed MARKING: BAT54 BAT54C BAT54A BAT54S Solid dot = Green molding compound device,if none, the normal device. Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameter Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Value Unit 30 V DC Blocking Voltage VR Forward Continuous Current IFM 200 mA Non-repetitive Peak Forward Surge Current @ t=8.3ms IFSM 600 mA Repetitive Peak Forward Current @ t≤1s,δ≤0.5 IFRM 300 mA Power Dissipation PD 200 mW RΘJA 500 ℃/W Junction Temperature Tj 125 ℃ Storage Temperature Tstg -55~+150 ℃ Thermal Resistance from Junction to Ambient Electrical Characteristics ( Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Reverse voltage Forward voltage Symbol V(BR) Min Typ Max VF Unit Test conditions V IR=100μA 0.24 V IF1=0.1mA 0.32 V IF2=1mA 0.40 V IF3=10mA 0.50 V IF4=30mA 1 V IF5=100mA 30 Reverse current IR 2 μA VR=25V Diode capacitance CD 10 pF VR=1V,f=1MHz Reverse recovery time trr 5 ns Rev 8: Nov 2014 www.born-tw.com IF=IR=10mA Irr=0.1×IR,RL=100Ω Page 1 of 3 BAT54xx Series SWITCHING SCHOTTKY Schottky Barrier Diode Forward (uA) o C o C REVERSE CURRENT IR =1 00 a T 1 0.1 0 200 400 600 FORWARD VOLTAGE VF 12 8 4 15 REVERSE VOLTAGE Rev 8: Nov 2014 20 VR 0.1 0 5 10 15 (mW) 250 PD 200 25 30 (V) www.born-tw.com 20 VR 25 30 125 150 (V) Power Derating Curve 300 16 10 o Ta=25 C REVERSE VOLTAGE f=1MHz 5 1 (mV) Ta=25℃ 0 Ta=100 C 10 0.01 1000 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 800 Capacitance Characteristics 20 0 Characteristics o 10 0.01 Reverse 100 T= a 2 5 FORWARD CURRENT Characteristics 100 IF (mA) 1000 ROHS 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta (℃) Page 2 of 3 BAT54xx Series SWITCHING SCHOTTKY Schottky Barrier Diode ROHS SOT -23 PACKAGE OUTLINE Plastic surface mounted package SOT-23 (UNIT)：mm Rev 8: Nov 2014 www.born-tw.com Page 3 of 3