LM358N

LM358 LINEAR INTEGRATED CIRCUIT DUAL OPERATIONAL AMPLIFIER DESCRIPTION The LM358 consists of two independent high gain, internally frequency compensated operational amplifier. It can be operated from a single power supply and also split power supplies. SOP-8 FEATURES *Internally frequency compensated for unity gain. *Wide power supply range 3V - 36V. *Input common-mode voltage range include ground. *Large DC voltage gain. APPLICATIONS DIP-8 *General purpose amplifier. *Transducer amplifier. ORDERING INFORMATION DEVICE Package Type MARKING Packing Packing Qty LM358N DIP8 LM358 TUBE 2000/box LM358M/TR SOP8 LM358 REEL 2500/reel PIN CONFIGURATIONS http://www.hgsemi.com.cn OUTPUT 1 1 8 INPUT1(-) 2 7 OUTPUT2 INPUT1(+) 3 6 INPUT2(-) VEE / GND 4 5 INPUT2(+) 1 Vcc 2019 OCT LM358 BLOCK DIAGRAM For one channel Vcc T21 T20 T18 T17 T16 INPUT (-) T1 T2 T4 T15 T3 C1 T9 INPUT (+) R2 R1 T12 OUTPUT T14 T7 T5 T6 T8 T10 T11 T13 Vee ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage Differential Input Voltage Input Voltage SYMBOL VALUE Vcc ± 18 or 36 VI(DIFF) 32 VI -0.3 ~ +36 Output Short to Ground Operating Temperature UNIT V V V Continuous TOPR 0 ~ +70 °C TSTG -65 ~ +150 °C Range Storage Temperature Range http://www.hgsemi.com.cn 2 2019 OCT LM358 ELECTRICAL CHARACTERISTICS(Vcc=5.0V,VEE=GND,TA=25°C, unless otherwise specified£ PARAMETER Input Offset Voltage SYMBOL TEST CONDITION VIO VCM=0V toVCC-1.5V MIN © TYP MAX UNIT 2.9 7.0 mV VO(P)=1.4V,RS=0Ω Input Offset Current IIO 5 50 nA Input Bias Current IBIAS 45 250 nA Input Common Mode Voltage VI(R) VCC=30V VCC-1.5 V Power Supply Current ICC RL=∝,VCC=30V 0.8 2.0 mA RL=∝,Full Temperature 0.5 1.2 mA 0 Range Large Signal Voltage Gain GV VCC=15V,RL>=2KΩ 25 VO(H) VCC=30V,RL=2KΩ 26 VCC=30V,RL=10KΩ 27 100 V/mV VO(P)=1V to 11V Output Voltage Swing VO(L) Common Mode Rejection VCC=5V,RL>=10KΩ V 28 5 V 20 mV CMRR 65 80 dB PSRR 65 100 dB Ratio Power Supply Rejection Ratio Channel Separation CS Short Circuit Current to ISC f=1KHZ to 20KHZ 120 40 dB 60 mA Ground Output Current ISOURCE VI(+)=1V,VI(-)=0V 20 30 mA 10 15 mA 12 100 mA VCC=15V,VO(P)=2V VI(+)=0V,VI(-)=1V ISINK VCC=15V,VO(P)=2V VI(+)=0V,VI(-)=1V VCC=15V,VO(P)=200mV Differential Input Voltage http://www.hgsemi.com.cn VI(DIFF) VCC 3 V 2019 OCT LM358 TYPICAL PERFORMANCE CHARACTERISTICS Fig.2 Input Current vs Temperature Fig.1 Input Voltage Range 100 Input Current (mA) Input Voltage 15 Negative Input 10 Positive Input 80 Vcc=+30V 60 Vcc=+15V 40 5 Vcc=+5V 20 0 0 10 Power Supply Voltage 0 5 -50 15 -25 0 25 Temperature(¢XC) 75 100 Fig. 4 Voltage Gain vs Supply Voltage Fig.3 Input Current vs Supply Voltage 160 40 Vcc RL=20kΩ (dB) Ic 30 Voltage Gain æ Input Current (mA) 50 20 Ta= 0~+85¢XC 10 Ta= -40¢XC 10 RL=2kΩ 80 40 0 0 0 120 20 30 0 40 7.5 15 22.5 30 Supply Voltage (V) Supply Voltage (V) Fig. 6 Common Mode Rejection Ratio vs Frequency Common Mode Rejection Ratio (dB) Fig. 5 Open Loop Gain vs Frequency (dB) 100 Voltage Gain 120 80 Vcc 100M Ω 0.1 µF Vin Vcc/2 60 40 Vcc=30V Vcc=15V 20 120 100 Vcc=+7.5V Vee=-7.5V 80 +7.5V 60 100k Ω 100 Ω 40 100 Ω Vin 100k Ω 20 -7.5V 0 0 100 101 2 10 103 104 105 106 2 10 10 7 Frequency (Hz) http://www.hgsemi.com.cn 10 3 10 4 105 106 Frequency (Hz) 4 2019 OCT LM358 Fig. 8 Voltage Follower Response (Small Signal) Output Voltage¹ (V) Input Voltage (V) Fig. 7 Voltage Follower Pulse Response 450 3 RL=2kΩ Vcc=15V Output Voltage (V) 2 1 0 3 400 350 2 1 300 0 0 20 10 30 Time (uS) 40 1 0 50 Fig. 9 Gain vs Large Signal Frequency 3 2 4 5 6 Timeä (µs) 7 8 9 Fig. 10 Output Current Sinking vs Output Voltage Output Voltage Gain (Vp-p) 8 Output Voltage Vo(V) 7 15 +15V 100k 1k Vi +7V 2k 10 5 Ta=25¢XC 6 Vcc Vcc/ 2 5 Vo Io 4 3 2 0 1 10 3 10 4 10 5 10 6 -3 10 -2 10 -1 10 1 10 10 2 Output Source Current (mA) Frequency (Hz) Fig. 11 Output Sink Current vs Output Voltage Fig.12 Current Limiting vs Temperature 10 Output Current Io (mA) Output Voltage (V) 60 1 40 Vcc=+5V Vcc=+15V -1 Vcc 10 Vcc/ 2 Vcc=+30V 20 Vo Io 0 -3 10 -2 10 -1 10 1 10 10 2 -50 Output Sink Current (mA) http://www.hgsemi.com.cn 5 -25 25 50 0 TemperatureÈ (¢XC) 75 100 2019 OCT LM358 PACKAGE SOP8 Q B C C1 A D A1 a 0.25 b UNIT:mm DIM. A A1 B C C1 D MIN 4.520 0.100 4.800 5.800 3.800 0.400 TYP 4.570 4.920 6.100 3.900 - MAX 4.620 0.250 5.100 6.250 4.000 0.950 DIM. a b Q MIN 0.400 1.260 0° MAX 6.680 9.500 9.000 7.82 3.550 DIM. a b c d L L1 TYP 0.420 1.270 - MAX 0.440 1.280 8° DIP8 D1 L1 L E B d D A c a http://www.hgsemi.com.cn UNIT:mm DIM. A B D D1 E b 6 MIN 6.100 9.000 8.400 7.42 3.100 TYP 6.300 9.200 8.700 7.62 3.300 MIN 1.504 0.437 2.530 0.500 3.000 TYP 1.524 0.889 0.457 2.540 3.200 MAX 1.544 0.477 2.550 0.700 3.600 2019 OCT LM358 Important statement: Huaguan Semiconductor Co,Ltd. reserves the right to change the products and services provided without notice. Customers should obtain the latest relevant information before ordering, and verify the timeliness and accuracy of this information. Customers are responsible for complying with safety standards and taking safety measures when using our products for system design and machine manufacturing to avoid potential risks that may result in personal injury or property damage. Our products are not licensed for applications in life support, military, aerospace, etc., so we do not bear the consequences of the application of these products in these fields. Our documentation is only permitted to be copied without any tampering with the content, so we do not accept any responsibility or liability for the altered documents. http://www.hgsemi.com.cn 7 2019 OCT