RCLAMP0504FATCT-N

RCLAMP0504FATCT-N ESD Protection Diode Array »Features ■ 60Watts peak pulse power (tp = 8/20μs) ■ SOT363 package ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=0.25pF typ.) ■ Protection one data/power line ■ IEC 61000-4-2 ±15kV contact ±20kV air ■ IEC 61000-4-4 (EFT) 40A (5/50ns) ■ IEC 61000-4-5 (Lightning) 3.5A (8/20μs) »Applications ■ Ethernet ■ Digital Visual Interface (DVI) ■ USB2.0 ■ Notebook and PC Computers »Mechanical Data ■ SOT363 package ■ Molding compound flammability rating: UL 94V-0 ■ Packaging: Tape and Reel ■ RoHS/WEEE Compliant »Schematic & PIN Configuration I/O 1 6 I/O GND Vcc I/O 3 4 I/O SOT363 Revision 2018 www.born-tw.com 1/4 RCLAMP0504FATCT-N »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs ) PPP 60 Watts Peak Pulse Current ( tp =8/20μs )(note1) Ipp 3.5 A VESD 20 15 kV Lead Soldering Temperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Reverse Breakdown Voltage Conditions Typical VRWM VBR IT=1mA Reverse Leakage Current IR VRWM=5V,T=25℃ Peak Pulse Current IPP tp =8/20μs Clamping Voltage VC IPP=3.5A,tp=8/20μs Cj Junction Capacitance Min Max Units 5.0 V 6 V 50 500 nA 3 A 15 18 V VR = 0V, f = 1MHz IO to IO 0.2 0.25 VR = 0V, f = 1MHz IO to GND 0.35 0.5 pF »Electrical Parameters (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ V RWM V C V BR VRWM IT IR I IT R V RWM VBR VC V Breakdown Voltage @ IT Test Current IPP Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/4 RCLAMP0504FATCT-N »Typical Characteristic Curves Fig.1 Peak Pulse Power RatingCurve Fig.2 Pulse Derating Curve Percent of Rated Power for Ipp Peak Pulse Power –PPP(KW) 10 1 60w 8/20μs waveform 0.1 0.01 0.1 1 10 100 Pulse Duration tp (μs) 60 40 20 0 100%IPP , 8μS 25 50 75 100 1 Ambient Temperature—TA(℃) 150 100% 90% 50%IPP, 20μS e-t 60 Percent of IPP 30ns 80 40 20 0 0 Fig.4 PulseWaveform-ESD(IEC61000-4-2) 100 Percent of IPP 80 1000 Fig.3 PulseWaveform-8/20μs 120 110 100 60ns 10% 0 5 10 15 20 25 30 tr 0.7 to 1ns 0 30 Time (μs) 60 Time (ns) Fig.5 Eye Diagram - HDMI mask at 5.0Gbpsper channel Fig.6 Insertion Loss S21 - I/O toGND 2 3.2GHz @ -1dB Horizontal: 50 ps/div Vertical: 200 mV/div Insertion Loss (dB) 0 -2 -4 5GHz @ -3dB -6 -8 -10 100k 1M 10M 100M 1G 10G Frequency (Hz) Revision 2018 www.born-tw.com 3/4 RCLAMP0504FATCT-N »Outline Drawing – SOT363 »Marking 5T Ordering information Order code RCLAMP0504FATCT-N Revision 2018 Package SOT363 Base qty 3k www.born-tw.com Delivery mode Tape and reel 4/4