BSD3C051L2

BSD3C051L2 ESD Protection Diode »Features ■ 230Watts peak pulse power (tp = 8/20μs) ■ Tiny 0805 package ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=1.4pF typ.) ■ Protection one data/power line ■ IEC 61000-4-2 ±30V contact ±30kV air ■ 1.2/50μs 12ohm 2kV (GbE PHY side) ■ 10/700μs 40ohm 4kV (GbE PHY side ) »Applications »Mechanical Data ■ 10/100/1000Ethernet ■ SOD323 package ■ Intergated Magnetics/RJ45Connectors ■ Molding compound flammability rating: UL 94V-0 ■ LAN/WAN Equipment ■ Packaging: Tape and Reel ■ Notebooks, Desktops, and Servers ■ RoHS/WEEE Compliant ■ Portable Instrumentation »Schematic & PINConfiguration SOD-323 Revision 2018 www.born-tw.com 1/5 BSD3C051L2 »Absolute MaximumRating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs) PPP 230 Watts Peak Pulse Current ( tp =8/20μs)(note1) Ipp 14 A VESD 30 30 kV Lead SolderingTemperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2(Contact) »ElectricalCharacteristics Parameter Symbol Reverse Stand-Off Voltage Reverse Breakdown Voltage Conditions Min Typical VRWM Max Units 5.0 V 6.0 VBR IT=1mA V Reverse Leakage Current IR VRWM=5.0V,T=25℃ 1 uA Clamping Voltage VC IPP=7A,tp=8/20V 13 V Clamping Voltage VC IPP=14A,tp=8/20μs 17 V Junction Capacitance Cj VR = 0V, f = 1MHz 1.4 pF »Electrical Parameters (TA = 25°C unless otherwisenoted) Symbol Parameter I PP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ I PP V RWM IR VT IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ V RWM IPP VT VC VBR VRWM IT IR Trigger Voltage @ I T ITIR VRWM VBR VC VT Test Current IPP Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/5 BSD3C051L2 »Typical Characteristics Figure 2: Power Derating Curve 10k 110 1000 230w Percent of Rated Power for Ipp Ppp – Peak Pulse Power - Ppp(W) Figure 1: Peak Pulse Power vs. Pulse Time 8/20μs waveform 100 10 0.1 1 10 100 100 90 80 70 60 50 40 30 20 10 0 1,000 0 25 td – Pulse Duration - µs Figure3: Pulse Waveform Waveform Paramters tr=8µs td=20µs 90 80 Ipp 100 125 150 20 Clamping Voltage–VC (V) 100 Percent 75 Figure 4: Clamping Voltage vs.Ipp 110 70 e-1 60 50 Ambient Temperature - TA (℃) 50 40 30 td=Ipp/2 20 15 Test Waveform Paramters tr=8µs td=20µs 10 5 10 0 0 5 10 15 20 25 30 0 Time (µs) Revision 2018 5 10 15 20 25 Peak Pulse Current–IPP (A) www.born-tw.com 3/5 BSD3C051L2 »Lightning Surge Test Results for Gigabit Ethernet During the metallic (line-to-line) surge test, the line being stressed is tied to the surge generator with the remaining lines tied together and connected to the generator ground. Current will flow through the line transformer transferring energy to the PHY side of the transformer. Figure 5 shows the test set-up for measuring the clamping voltage of the device. This set up is designed to test the surge in an actual gigabit Ethernet (GbE) circuit. Two 4.7 Ohm resistors is usedfor decoupling. The clamping voltage of the BSD3C051L 2 for a metallic mode 4KV (10/ 700μs) surge.The clamping voltage, measured at less than 13 volts, provides sufficient clamping margin to minimize electrical stress and is well below the failure voltage range of typical GbE PHY chips . Ipp R L =4.7 Ω + + Vin Vc R L =4.7 Ω - Gigabit Ethernet Phy - Figure5-Clamping VoltageTestSet-Up RJ-45 BSD3C051L2 Gigabit Ethernet PHY Figure 6 - GbE Protection to Lightning, ESD, and CDE Revision 2018 www.born-tw.com 4/5 BSD3C051L2 »Outline Drawing – SOD323 C A DIMENSIONS SYMBOL E B 1 2 MILLIMETER A MIN 1.600 MAX 1.800 MIN 0.063 B 0.250 0.350 0.010 0.014 C 2.500 2.700 0.098 0.106 D D H L L1 1.000 MAX 0.071 0.039 E 1.200 1.400 0.047 0.055 F 0.080 0.150 0.003 0.006 L F INCHES 0.475 REF 0.019REF L1 0.250 0.400 0.010 0.016 H 0.000 0.100 0.000 0.004 Marking 1 Ordering information Ordercode BSD3C051L 2 Revision 2018 Package SOD323 5LH 2 Base qty 3k www.born-tw.com Deliverymode Tape andreel 5/5