SS84C

山东晶导微电子股份有限公司 SS82C THRU SS820C Jingdao Microelectronics co.LTD Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 8.0A PINNING PIN FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: SS82 ~ SS820 Simplified outline SMC and symbol MECHANICAL DATA • Case: SMC • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 0.22g / 0.0077oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS82C SS84C SS86C SS88C SS810C SS812C SS815C SS820C Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 8.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 150 A Max Instantaneous Forward Voltage at 8 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range VF 0.45 0.55 0.85 1.0 50 IR Cj 0.70 mA 400 600 V pF RθJA 35 °C/W Tj -55 ~ +150 °C T stg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2017.01 SMC-S-SS82C~SS820C-8A200V Page 1 of 3 山东晶导微电子股份有限公司 SS82C THRU SS820C Jingdao Microelectronics co.LTD Fig.2 Typical Reverse Characteristics Average Forward Current (A) 9.6 8.0 6.4 4.8 3.2 1.6 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 T J =100°C 10 3 10 1 T J =25°C 10 0 0 Case Temperature (°C) 60 80 100 Fig.4 Typical Junction Capacitance T J =25°C Junction Capacitance ( pF) 20 10 1 SS82C SS84C SS86C/SS88C SS810C/SS820C 0.1 0 0.5 1.0 1.5 100 SS82C/SS84C SS54F/SS520F SS86C~SS820C 20 10 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 175 150 125 100 75 50 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 500 Instaneous Forward Voltage (V) 180 25 1000 2.0 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) Peak Forward Surage Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic 100 10 Number of Cycles at 60Hz 2017.01 T J =75°C 10 2 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 SS82C THRU SS820C Jingdao Microelectronics co.LTD PACKAGE OUTLINE SMC Plastic surface mounted package; 2 leads E A A1 A C b D L E1 VM A SMC mechanical data A E D E1 A1 C L b max 2.62 7.0 6.2 8.0 0.21 0.31 1.6 3.25 min 2.00 6.5 5.6 7.6 0.05 0.15 0.9 2.75 max 103 276 244 315 8.3 12 63 128 min 79 256 220 299 2.0 5.9 35 108 UNIT mm mil Marking The recommended mounting pad size Type number 3.8 (150) 4.1 (160) 4.3 (170) 4.1 (160) mm Unit ： (mil) 2017.01 703248B8 Marking code SS82C SS 8 2 SS 8 4C SS 8 4 SS 8 6C SS 8 6 SS 8 8C SS 8 8 SS 8 10C SS 8 10 SS 8 12C SS 8 12 SS 8 15C SS 8 15 SS 8 20C SS 8 20 Page 3 of 3