PESD5V0X1BL-N

PESD5V0X1BL-N ESD Protection Diode »Features ■ 120Watts peak pulse power (tp = 8/20μs) ■ Tiny DFN1006 package ■ Bidirectional configurations ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=0.7pF typ.) ■ Protection one data/power line ■ IEC 61000-4-2 ±30V contact ±30kV air ■ 1.2/50μs 12ohm 2kV (GbE PHY side) ■ 10/700μs 40ohm 4kV (GbE PHY side ) »Applications »Mechanical Data ■ 10/100/1000Ethernet ■ DFN1006 package ■ Intergated Magnetics/RJ45Connectors ■ Molding compound flammability rating: UL 94V-0 ■ LAN/WAN Equipment ■ Packaging: Tape and Reel ■ Notebooks, Desktops, and Servers ■ RoHS/WEEE Compliant ■ Portable Instrumentation »Schematic & PINConfiguration DFN1006 Revision 2018 www.born-tw.com 1/5 PESD5V0X1BL-N »Absolute MaximumRating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs) PPP 120 Watts Peak Pulse Current ( tp =8/20μs)(note1) Ipp 7 A VESD 30 30 kV Lead SolderingTemperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ Storage Temperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2(Contact) »ElectricalCharacteristics Parameter Symbol Reverse Stand-OffVoltage Conditions Min VRWM VT IT=1mA Reverse LeakageCurrent IR VRWM=5V,T=25℃ Peak PulseCurrent IPP tp =8/20μs ClampingVoltage VC IPP=7A,tp=8/20μs JunctionCapacitance Cj VR = 0V, f =1MHz TriggerVoltage Typical 7.5 Max Units 5.0 V 8.4 20 V 100 nA 7 A 16 20 V 0.7 0.8 pF »Electrical Parameters (TA = 25°C unless otherwisenoted) Symbol Parameter I PP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ I PP V RWM IR VT IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ V RWM IPP VTVC VBR Trigger Voltage @ I T VRWM IT IR ITIR VRWM VBR VC VT Test Current IPP Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/5 PESD5V0X1BL-N »Typical Characteristics Figure 2: Power Derating Curve 10 110 100 1 120w 8/20µs waveform 0.1 1 0.010.1 10 100 90 Percent of Rated Power for Ip p P p p – Peak Pulse Powe r - Ppp (KW ) Figure 1: Peak Pulse Power vs. Pulse Time 80 70 60 50 40 30 20 10 0 0 1,000 25 td – Pulse Duration -µs Figure3: Pulse Waveform Percen t Ip p 80 e-1 50 40 td=Ipp/2 20 14 12 8 6 4 2 Revision 2018 10 15 Time (µs) 20 25 30 Test Waveform Paramters tr=8µs td=20µs 10 0 5 150 16 10 0 125 18 Clamping Voltage–V C (V) 90 30 100 20 W aveform Paramters tr=8µs td=20µs 100 60 75 Figure 4: Clamping Voltage vs.Ipp 110 70 50 Ambient Temperature - TA (℃) 0 2 4 6 8 10 12 Peak Pulse Current–IPP (A) www.born-tw.com 3/5 PESD5V0X1BL-N »Lightning Surge Test Results for Gigabit Ethernet During the metallic (line-to-line) surge test, the line being stressed is tied to the surge generator with the remaining lines tied together and connected to the generator ground. Current will flow through the line transformer transferring energy to the PHY side of the transformer. Figure 5 shows the test set-up for measuring the clamping voltage of the device.This set up is designed to test the surge in an actual gigabit Ethernet (GbE) circuit. Two 4.7 Ohm resistors is usedfor decoupling. The clamping voltage of the PESD5V0X1BL-N for a metallic mode 4000V (10/ 700μs) surge.The clamping voltage, measured at less than 13 volts, provides sufficient clamping margin to minimize electrical stress and is well below the failure voltage range of typical GbE PHY chips . Ipp R L =4.7 Ω + + Vin Vc R L =4.7 Ω - Gigabit Ethernet Phy - Figure5-Clamping VoltageTestSet-Up RJ-45 PESD5V0X1BL-N Gigabit Ethernet PHY PESD5V0X1BL-N Figure 6 - GbE Protection to Lightning, ESD, and CDE Revision 2018 www.born-tw.com 4/5 PESD5V0X1BL-N »Outline Drawing –DFN1006 Marking UE Ordering information Ordercode PESD5V0X1BL-N Revision 2018 Package DFN1006 Base qty 10k www.born-tw.com Deliverymode Tape andreel 5/5