MMBT2907A

MMBT2907A SOT-23 Plastic-Encapsulate Transistors(PNP) Transistors RHOS Features SOT-23  Epitaxial planar die construction  Complementary NPN Type available(MMBT2222A) Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V 1. BASE VCEO Collector-Emitter Voltage -60 V 2. EMITTER VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -600 mA PC Total Device Dissipation 250 mW RθJA Thermal Resistance Junction to Ambient 500 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 to +150 ℃ 3. COLLECTOR MARKING: 2F Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). Parameter Symbol Test conditions MIN TYP MAX UNIT IC=-10μA,IE=0 -60 V(BR)CEO* IC=-10mA,IB=0 -60 V V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -20 nA Base cut-off current IEBO VCE=-3V, IC =0 -10 nA Collector cut-off current ICEX VCE=-30 V, VBE(off) =-0.5V -50 nA hFE(1) VCE=-10V,IC=-150mA 100 hFE(2) VCE=-10V,IC=-0.1mA 75 hFE(3) VCE=-10V,IC=-1mA 100 hFE(4) VCE=-10V,IC=-10mA 100 hFE(5) VCE=-10V,IC=-500mA 50 VCE(sat)* IC=-150mA,IB=-15mA -0.4 V VCE(sat)* IC=-500mA,IB=-50mA -1.6 V VBE(sat)* IC=-150mA,IB=-15mA -1.3 V VBE(sat)* IC=-500mA,IB=-50mA -2.6 V Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf VCE=-20V,IC=-50mA,f=100MHz VCE=-30V,IC=-150mA,B1=-15mA VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA V 300 200 MHz 10 nS 25 nS 225 nS 60 nS *Pulse test: tp≤300μS, δ≤0.02. Rev 8: Nov 2014 www.born-tw.com Page 1 of 2 MMBT2907A Transistors Rev 8: Nov 2014 SOT-23 Plastic-Encapsulate Transistors(PNP) www.born-tw.com RHOS Page 2 of 2