RClamp7534P-N

RClamp7534P-N ESD Protection Diode Array »Features ■ 45Watts peak pulse power (tp = 8/20μs) ■ Tiny DFN2010 package ■ Protect up to 4-lines ■ Solid-state silicon-avalanche technology ■ Low clamping voltage ■ Low leakage current ■ Low capacitance (Cj=0.28pF typ. I/O to I/O) ■ IEC 61000-4-2 ±12kV contact ±15kV air ■ IEC 61000-4-4 (EFT) 40A(5/50ns) ■ IEC 61000-4-5 (Lightning) 3.5A(8/20μs) »Applications »Mechanical Data ■ USB 3.0/3.1,Type C ■ DFN2010 package ■ HDMI 1.4/2.0,Display Port 1.3 ■ Molding compound flammability rating: UL 94V-0 ■ Unified Display interface ■ Packaging: Tape and Reel ■ Digital visual interface ■ RoHS/WEEE Compliant »Schematic & PIN Configuration Pin 1 Pin 2 Pin 3 Pin 4 I/O 5 4 Pin 5 1 I/O Revision 2018 I/O www.born-tw.com 2 3 GND I/O 1/4 RClamp7534P-N »Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Power ( tp =8/20μs) PPP 45 Watts Peak Pulse Current ( tp =8/20μs )(note1) Ipp 3.5 A VESD 15 12 kV Lead SolderingTemperature TL 260(10seconds) ℃ Junction Temperature TJ -55 to + 125 ℃ StorageTemperature Tstg -55 to + 125 ℃ ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2(Contact) »Electrical Characteristics Parameter Symbol Reverse Stand-Off Voltage Conditions Min Typical Max Units 5.0 V 7.2 9.5 V 0.1 0.5 μA VRWM VBR IT=1mA Reverse LeakageCurrent IR VRWM=5V,T=25℃ Peak Pulse Current IPP tp =8/20μs 3.5 A Clamping Voltage VC IPP=3.5A,tp=8/20μs 13 V Reverse BreakdownVoltage Cj Junction Capacitance 6.0 VR = 0V, f = 1MHz I/O to I/O 0.28 0.4 pF VR = 0V, f = 1MHz I/O to GND 0.28 0.4 pF »Electrical Parameters (TA = 25°C unless otherwisenoted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP V RWM IR V BR IT I IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ V RWM VC V BR V RWM IT IR ITIR VRWM V BR V C V Breakdown Voltage @ IT Test Current IPP Note:. 8/20μs pulsewaveform. Revision 2018 www.born-tw.com 2/4 RClamp7534P-N »TypicalCharacteristics Fig.2 IEC61000-4-2 +8kV ContactESD ClampingWaveform Fig.1 IEC61000-4-2Waveform 100% 90% 30ns 10% tr 0.7 to 1ns Pf I n o t c r P e e 60ns 0 30 60 Time (ns) Time (ns) Fig.3 Eye Diagram - USB3.1 at 10Gbpsper Fig.4 Insertion Loss S21 - I/O toI/O Insertion Loss (dB) channel m1 m2 m3 m4 = 0.123dB @2.5GHz = 0.245dB @5.0GHz = 0.489dB @7.5GHz = 3.751dB @15GHz Frequency (Hz) Revision 2018 www.born-tw.com 3/4 RClamp7534P-N »Outline Drawing – DFN2010 D A E Dim A A1 b D E e e1 L N A1 1 2 LxN Millimeters Min Nom Max 0.45 0.50 0.55 0.00 0.02 0.05 0.15 0.20 0.25 1.95 2.00 2.05 0.95 1.00 1.05 0.40 BSC 0.80 BSC 0.25 0.30 0.35 5 bxN e e1 »Marking M534 »Ordering information Order code RClamp7534P-N Revision 2018 Package DFN2010 Base qty 3000 www.born-tw.com Delivery mode Tape and reel 4/4