2N7002KW

2N7002KW N-Channel MOSFET »Pin Configurations »Features V = 60V ID = 0.2A DS R @V = 10V, Max =3Ω R @V = 4.5V, Max =4Ω DS(ON) DS(ON) GS GS »General Description  Super High dense cell design for extremely low RDS(ON)  Reliable and Rugged.  SOT-323 for Surface Mount Package.  ESD protected SOT-323 »Absolute Maximum Ratings @T =25℃ unless otherwise noted A Parameter Symbol Limit Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 0.2 A P o w er Dissip atio n PD 0.225 W R θJA 556 J unctio n T em p erature TJ 150 Sto rage T em p erature Tstg -50~+150 T herm al R esistance f ro m Revision 2018 J unction to Am b ient www.born-tw.com ℃ /W ℃ 1/5 2N7002KW »Electrical Characteristics @T =25℃ unless otherwise noted A Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Drain Leakage Current IGSS RDS(ON) Gate Leakage Current a On-State Resistance VGS = 0 V, IDS = 250 μ A 60 - - V VDS = VGS, IDS = 250 μ A 0.8 1.5 2.5 V - - 1 μA - - 30 μA VGS = ±20 V, VDS = 0 V - - ±10 μA VGS = 10 V, IDS = 0.5 A - 1.9 3 VGS = 4.5 V, IDS = 0.2 A - 2.4 4 ISD = 0.5 A, VGS = 0 V - 0.7 1.3 VDS = 48 V, VGS = 0V TJ = 85 ℃ Ω Diode Characteristics VSD Diode Forward Voltage Revision 2018 www.born-tw.com V 2/5 2N7002KW »Package Information SOT-323 D e1 Dim in mm Symbol Ɵ e E1 E L C Min Nor Max A 0.90 1.00 1.10 A1 0.00 0.05 0.10 A2 0.90 0.95 1.00 b 0.20 0.30 0.40 c 0.08 0.12 0.15 D 2.00 2.10 2.20 E 2.15 2.30 2.45 E1 1.15 1.25 1.35 e 0.650TPY. b A2 A e1 1.2 1.3 1.4 L 0.26 0.36 0.46 θ 0° 4° 8° A1 »Ordering information Order code 2N7002KW Revision 2018 Package SOT-323 Marking 72K www.born-tw.com Base qty Delivery mode 3K Tape and reel 5/5