MMBT3906T

SOT-523 Plastic-Encapsulate Transistors MMBT3906T SOT-523 TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction z Complementary NPN Type Available Also Available in Lead Free Version z z 1. BASE 2. EMITTER MARKING:3N 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Value Units Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -Continuous -200 mA PC Collector Power Dissipation 150 mW RƟJA Thermal Resistance, Junction to Ambient 833 ℃/W TJ Operating Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA Collector cut-off current ICEX VCB=-30V,VBE(off)=-3V -0.05 μA hFE(1) VCE=-1V,IC=-0.1mA hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-50mA 60 hFE(5) VCE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA -0.25 V VCE(sat)2 IC=-50mA,IB=-5mA -0.4 V VBE(sat)1 IC=-10mA,IB=-1mA -0.85 V VBE(sat)2 IC=-50mA,IB=-5mA -0.95 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT Collector output capacitance Cobo Input capacitance Noise figure -0.65 300 250 MHz VCB=-5V,IE=0,f=1MHz 4.5 Ciob VEB=-0.5V,IE=0,f=1MHz 10 pF NF VCE=-5V,Ic=0.1mA, f Ω VCC=-3V, VBE(OFF)=-0.5V IC=-10mA , IB1=-1mA 4 dB 35 ns 35 ns 225 ns 75 ns Delay time td Rise time tr Storage time tS Fall time tf Page 1 of 2 VCE=-20V,IC=-10mA,f=100MHz 60 VCC=-3V, IC=-10mA IB1= IB2=-1mA 3/11/2013 pF Page 2 of 2 3/11/2013