MMDT3904DW

SOT-363 Plastic-Encapsulate Transistors ＭＭＤＴ３９０４ＤＷ DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Epitaxial planar die construction z Ideal for low power amplification and switching z MARKING:K6N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage IC Collector Current -Continuous PC TJ Tstg Symbol Parameter 5 V 0.2 A Collector Power Dissipation 0.2 Junction Temperature 150 W ℃ Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.05 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.05 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.05 μA hFE(1) VCE=1V,IC=0.1mA 40 hFE(2) VCE=1V,IC=1mA 70 hFE(3) VCE=1V,IC=10mA 100 hFE(4) VCE=1V,IC=50mA 60 hFE(5) VCE=1V,IC=100mA 30 VCE(sat)1 IC=10mA,IB=1mA 0.2 V VCE(sat)2 IC=50mA,IB=5mA 0.3 V VBE(sat)1 IC=10mA,IB=1mA 0.85 V VBE(sat)2 IC=50mA,IB=5mA 0.95 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT VCE=20V,IC=10mA,f=100MHz 0.65 300 300 MHz Collector output capacitance Cob VCB=5V,IE=0,f=1MHz 4 pF Noise figure NF VCE=5V,Ic=0.1mA,f=1kHz,RS=1KΩ 5 dB Delay time td 35 nS Rise time tr VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA 35 nS Storage time ts 200 nS Fall time tf VCC=3V, IC=10mA IB1=-IB2=1mA 50 nS Page 1 of 5 2/28/2013 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 Q, CHARGE (pC) Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 50 30 20 40 V 15 V 10 2.0 3.0 5.0 7.0 10 20 30 50 70 100 50 30 20 7 5 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time IC/IB = 10 IC/IB = 20 50 IC/IB = 10 30 20 7 5 50 70 100 200 IC/IB = 10 30 20 7 5 30 IC/IB = 20 100 70 50 10 20 VCC = 40 V IB1 = IB2 300 200 10 5.0 7.0 10 200 500 t′s = ts - 1/8 tf IB1 = IB2 100 70 2.0 3.0 1.0 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 20 100 70 10 2.0 V td @ VOB = 0 V 200 VCC = 40 V IC/IB = 10 300 200 t r, RISE TIME (ns) TIME (ns) 5.0 7.0 10 500 tr @ VCC = 3.0 V Page 2 of 5 2.0 3.0 Figure 4. Charge Data IC/IB = 10 1.0 1.0 Figure 3. Capacitance 100 70 300 200 QA IC, COLLECTOR CURRENT (mA) 300 200 t s′ , STORAGE TIME (ns) 20 30 40 QT 300 200 REVERSE BIAS VOLTAGE (VOLTS) 500 1.0 1000 700 500 100 70 50 t f , FALL TIME (ns) CAPACITANCE (pF) 2000 5.0 7 5 VCC = 40 V IC/IB = 10 3000 7.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 2/28/2013 TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200
IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 2 0 0.1 SOURCE RESISTANCE = 500
IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200
IC = 1.0 mA IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 0 100 40 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 12. Output Admittance h ie , INPUT IMPEDANCE (k OHMS) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 13. Input Impedance Page 3 of 5 5.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 11. Current Gain 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio 2/28/2013 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 -
55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 TJ = 25°C VBE(sat) @ IC/IB =10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -
55°C TO +25°C -
0.5 -
55°C TO +25°C -
1.0 +25°C TO +125°C VB FOR VBE(sat) -
1.5 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) 1.2 1.0 2.0 Page 4 of 5 5.0 10 20 50 100 200 -
2.0 0 20 40 60 80 100 120 140 180 200 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 2/28/2013 Page 5 of 5 2/28/2013