GB01SLT12-214

GB01SLT12-214 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features VRRM IF (Tc = 160°C) QC = = = 1200 V 1A 4 nC Package • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Superior Figure of Merit QC/IF • Low Thermal Resistance • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient of VF • Extremely Fast Switching Speeds 1 2 DO-214 Advantages Applications • Low Standby Power Losses • Improved Circuit Efficiency (Lower Overall Cost) • Low Switching Losses • Ease of Paralleling without Thermal Runaway • Smaller Heat Sink Requirements • Low Reverse Recovery Current • Low Device Capacitance • Low Reverse Leakage Current • Boost Diode in Power Factor Correction (PFC) • Switched Mode Power Supplies (SMPS) • AC-DC Converters & DC-DC Converters • Freewheeling / Anti-parallel Diode in Inverters • Solar Micro-inverters • LED and HID Lighting • Medical Imaging Systems • High Voltage Sensing Absolute Maximum Ratings (At TC = 25 °C Unless Otherwise Stated) Parameter Symbol Repetitive Peak Reverse Voltage Conditions Values Unit 1200 V TC = 160 °C, D = 1 1 A VRRM Continuous Forward Current IF TC = 25 °C, tP = 10 ms 10 TC = 150 °C, tP = 10 ms 8 TC = 25 °C, tP = 10 ms 6 TC = 150 °C, tP = 10 ms 4 IF,max TC = 25 °C, tP = 10 µs 120 A i2t Value ∫i2 dt TC = 25 °C, tP = 10 ms 0.5 A2 s Non-Repetitive Avalanche Energy EAS L = 36 mH, IAS = 1 A 18 mJ Diode Ruggedness dV/dt VR = 0 ~ 960 V 100 V/ns Power Dissipation Ptot TC = 25 °C 19 W -55 to 175 °C Non-Repetitive Peak Forward Surge Current, Half Sine Wave IF,SM Repetitive Peak Forward Surge Current, Half Sine Wave IF,RM Non-Repetitive Peak Forward Surge Current Operating and Storage Temperature Aug 2018 Rev1.2 Tj , Tstg www.genesicsemi.com/schottky_mps/GB01SLT12-214.pdf A A Page 1 of 7 GB01SLT12-214 1200 V SiC MPS™ Diode Electrical Characteristics Parameter Symbol Diode Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Switching Time ts Total Capacitance C Conditions Values Typ. Max. IF = 1 A, Tj = 25 °C 1.5 1.8 IF = 1 A, Tj = 175 °C 2 2.4 VR = 1200 V, Tj = 25 °C 0.1 1 VR = 1200 V, Tj = 175 °C 0.3 3.6 IF ≤ IF,MAX dIF/dt = 200 A/μs Tj = 175 °C Min. VR = 400 V 3 VR = 800 V 4 VR = 400 V VR = 800 V < 10 VR = 1 V, f = 1 MHz, Tj = 25 °C 71 VR = 800 V, f = 1 MHz, Tj = 25 °C 5 Unit V µA nC ns pF Thermal / Mechanical Characteristics Thermal Resistance, Junction - Lead Weight Aug 2018 Rev1.2 RthJL 7.72 °C/W WT 0.1 g www.genesicsemi.com/schottky_mps/GB01SLT12-214.pdf Page 2 of 7 GB01SLT12-214 1200 V SiC MPS™ Diode IF = f(VF,Tj); tP = 10 µs IF = f(VF,Tj); tP = 10 µs Figure 1: Typical Forward Characteristics Figure 2: Typical High Current Forward Characteristics IR = f(VR,Tj) Ptot = f(TC) Figure 3: Typical Reverse Characteristics Figure 4: Power Derating Curve Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GB01SLT12-214.pdf Page 3 of 7 GB01SLT12-214 1200 V SiC MPS™ Diode C = f(VR); Tj = 25 °C; f = 1 MHz Figure 5: Typical Junction Capacitance vs Reverse Voltage Characteristics Qc = f(VR); Tj = 25 °C; f = 1 MHz EC = f(VR); Tj = 25 °C; f = 1 MHz Figure 6: Typical Capacitive Charge vs Reverse Voltage Characteristics Figure 7: Typical Capacitive Energy vs Reverse Voltage Characteristics Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GB01SLT12-214.pdf Page 4 of 7 GB01SLT12-214 1200 V SiC MPS™ Diode IF = (VF – VBI)/RDIFF (A) Built-In Voltage (VBI): VBI(Tj) = m*Tj + n (V) m = -1.43e-03, n = 1.01 Differential Resistance (RDIFF): RDIFF(Tj) = a*Tj2 + b*Tj + c (Ω); a = 1.26e-05, b = 2.11e-03, c = 0.446 IF = f(VF, Tj) Figure 8: Forward Curve Model Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GB01SLT12-214.pdf Page 5 of 7 GB01SLT12-214 1200 V SiC MPS™ Diode Package Dimensions DO-214 Package Outline Recommended Solder Pad Layout NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS Aug 2018 Rev1.2 www.genesicsemi.com/schottky_mps/GB01SLT12-214.pdf Page 6 of 7 GB01SLT12-214 1200 V SiC MPS™ Diode RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS), as implemented November 15, 2017. RoHS Declarations for this product can be obtained from your GeneSiC representative. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact a GeneSiC representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document. Related Links • • • Soldering Document: http://www.genesicsemi.com/quality/quality-manual/ Tin-whisker Report: http://www.genesicsemi.com/quality/compliance/ Reliability Report: http://www.genesicsemi.com/quality/reliability/ Copyright © 2018 GeneSiC Semiconductor Inc. All Rights Reserved The information in this document is subject to change without notice Aug 2018 Rev1.2 Published by GeneSiC Semiconductor, Inc. 43670 Trade Center Place Suite 155 Dulles, VA 20166 Page 7 of 7