SS56F

山东晶导微电子有限公司 SS52F THRU SS520F Jingdao Microelectronics Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200V Forward Current - 5.0A PINNING PIN FEATURES • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: SS52 — SS520 Simplified outline SMAF and symbol MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg / 0.00095oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS52F SS54F SS56F SS58F SS510F SS512F SS515F SS520F Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 5.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 150 A Max Instantaneous Forward Voltage at 5 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance 1） Typical Thermal Resistance 2） 0.45 0.55 0.70 0.85 1.0 50 IR Cj Operating Junction Temperature Range Storage Temperature Range VF mA 500 800 V pF RθJA 45 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C 1） Measured 2） at 1MHz and applied reverse voltage of 4 V D.C. P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm) copper pad areas. 2015.03 SMAF-S-SS520F-5A200V Page 1 of 3 山东晶导微电子有限公司 SS52F THRU SS520F Jingdao Microelectronics Fig.2 Typical Reverse Characteristics Average Forward Current (A) 6.0 100LFM 5.0 4.0 3.0 2.0 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas 1.0 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 T J =100°C 10 3 10 1 T J =25°C 10 0 0 Lead Temperature (°C) 60 80 100 Fig.4 Typical Junction Capacitance T J =25°C Junction Capacitance ( pF) 20 10 1 SS52F SS54F SS56F/SS58F SS510F/SS520F 0.1 0 0.5 1.0 1.5 100 SS52F/SS54F SS54F/SS520F SS56F-SS520F 20 10 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 150 125 100 75 50 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 500 Instaneous Forward Voltage (V) 175 25 1000 2.0 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) Peak Forward Surage Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic 100 10 Number of Cycles at 60Hz 2015.03 T J =75°C 10 2 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 SS52F THRU SS520F Jingdao Microelectronics PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF ∠ALL ROUND C A ∠ALL ROUND HE g Top View mil Bottom View A C D E e g HE max 1.1 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 43 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm g pad e E A pad D E A V M 7° The recommended mounting pad size Marking Type number 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) mm Unit ： (mil) 2015.03 ∠ www.sdjingdao.com Marking code SS52F SS52 SS54F SS54 SS56F SS56 SS58F SS58 SS510F SS510 SS512F SS512 SS515F SS515 SS520F SS520 Page 3 of 3