SS32

山东晶导微电子有限公司 Jingdao Microelectronics SS32 THRU SS320 Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A PINNING PIN Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: SS32~SS320 Simplified outline SMA and symbol MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 60mg / 0.0021oz Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS32 SS34 SS34A SS36 SS38 SS310 SS312 SS315 SS320 Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 45 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 31.5 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 45 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 3.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 80 A Max Instantaneous Forward Voltage at 3 A VF 0.55 T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range 0.85 0.95 V IR 0.5 5 0.3 3 mA Cj 450 400 pF Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage 0.70 RθJA 70 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 2016.11 SMA-S-SS32~SS320-3A200V Page 1 of 3 山东晶导微电子有限公司 Jingdao Microelectronics SS32 THRU SS320 Fig.2 Typical Reverse Characteristics 3.5 3.0 2.4 1.8 1.2 0.6 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 75 50 100 125 150 Instaneous Reverse Current ( μA) Average Forward Current (A) Fig.1 Forward Current Derating Curve 10 4 SS32-SS36 SS38-SS320 10 1 T J =25°C 10 0 0 60 80 100 Fig.4 Typical Junction Capacitance T J =25°C Junction Capacitance ( pF) 20 10 1.0 SS32/SS34 SS34A/SS38 SS310/SS312 SS315/SS320 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 500 200 100 20 SS32~SS38 SS32F~SS36F SS310~SS320 SS38F~SS320F 10 1.8 0.1 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.5- Typical Transient Thermal Impedance 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 1000 Instaneous Forward Voltage (V) 10 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) T J =75°C 10 2 Case Temperature (°C) 100 Number of Cycles at 60Hz 2016.11 T J =100°C 10 3 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） www.sdjingdao.com Page 2 of 3 山东晶导微电子有限公司 Jingdao Microelectronics SS32 THRU SS320 PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c a VM e A HE g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil g e A D a 0.3 12 SS26F The recommended mounting pad size Marking Type number SS22F SS24F 2.2 (86) mm Unit ： (mil) 2016.11 SS32 SS32 1.8 (71) 1.8 (71) 1.8 (71) Marking code 611295A0 SS34 SS34 SS34A SS34A SS36 SS36 SS38 SS38 SS310 SS310 SS312 SS312 SS315 SS315 SS320 SS320 Page 3 of 3