MMBT3906

TRANSISTOR（PNP） MMBT3906 FEATURES Complementary Type The NPN Transistor SOT-23 MMBT3904 is Recommended Epitaxial Planar Die Construction 1．BASE 2．EMITTER 3．COLLECTOR MARKING: 2A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Unit VCBO Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -200 mA PC Total Device Dissipation 200 mW RθJA Thermal Resistance Junction to Ambient 625 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55 ~ +150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 µA Collector cut-off current ICEX VCE=-30V, VBE(off)=-3V -50 nA IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC=-10mA 100 hFE(2) VCE=-1V, IC= -50mA 60 hFE(3) VCE=-1V, IC= -100mA 30 Emitter cut-off current DC current gain Collector-emitter saturation voltage VCE(sat) IC=-50mA, Base-emitter saturation voltage VBE(sat) IC= -50mA, IB=-5mA Transition frequency Delay Time Rise Time Storage Time Fall Time Page 1 of 4 fT td tr ts tf B= -5mA VCE=-20V, IC=-10mA,f=100MHz VCC=-3V, VBE=-0.5V 300 -0.3 V -0.95 V 300 MHz 35 nS IC=-10mA, IB1=-IB2=-1mA 35 nS VCC=-3V, 225 nS 75 nS IC=-10mA, IB1=-IB2=-1mA 5/30/2011 Typical Characteristics Page 2 of 4 MMBT3906 5/30/2011 Page 3 of 4 5/30/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 4 of 4 SOT-23 5/30/2011