PESD9X3V3U

PESD9X3V3U Transient Voltage Suppressors ESD Protection Diodes with Ultra−Low Capacitance The ESD9 is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. 1 2 SOD882 Specification Features: • Ultra Low Capacitance 0.5 pF • Low Clamping Voltage • Small Body Outline Dimensions: • • • • • • • 1 0.039″ x 0.024″ (1.00 mm x 0.60 mm) Low Body Height: 0.020″ (0.5 mm) Stand−off Voltage: 3.3 V Low Leakage Response Time is Typically < 1.0 ns IEC61000−4−2 Level 4 ESD Protection This is a Pb−Free Device S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 2 PIN 1. CATHODE 2. ANODE Ordering information Device PESD9X3V3U Marking P Shipping 10000/Tape&Reel QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating IEC 61000−4−2 (ESD) Symbol Contact Air Value Unit ±10 ±15 kV Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C °PD° 150 mW Storage Temperature Range Tstg −55 to +150 °C Junction Temperature Range TJ −55 to +125 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. Rev : 01.06.2015 1/4 www.leiditech.com PESD9X3V3U ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol I Parameter IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR Working Peak Reverse Voltage VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C VC VBR VRWM Maximum Reverse Leakage Current @ VRWM V IR VF IT IPP Uni−Directional TVS Capacitance @ VR = 0 and f = 1.0 MHz ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA ) VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT C (pF) VC (V) @ IPP = 1 A (Note 3) VC Per IEC61000−4−2 (Note 4) Device Device Marking Max Max Min mA Typ Max Max PESD9X3V3U P 3.3 1.0 4.8 1.0 0.5 0.9 12 Figures 1 and 2 See Below 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 5. 4. For test procedure see Figures 3 and 4. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Rev : 01.06.2015 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 2/4 www.leiditech.com PESD9X3V3U IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 80 Figure 5. 8 X 20 ms Pulse Waveform Rev : 01.06.2015 3/4 www.leiditech.com PESD9X3V3U SOD882 Package Outline Drawing Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2015 4/4 www.leiditech.com