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ULC3654N

ULC3654N

  • 厂商:

    LEIDITECH(雷卯电子)

  • 封装:

    DFN6_1.6X1.6MM_EP

  • 描述:

    ESD保护 VRWM=5.5 V VBR(Min)=6.5 V VC=20 V IPP=5 A Ppp=100 W DFN6_1.6X1.6MM_EP

  • 数据手册
  • 价格&库存
ULC3654N 数据手册
ULC3654N Urtra Low Capacitance TVS Diode Array Features ● ● ● ● Ultra low leakage: nA level Operating voltage: 5V Low clamping voltage Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±25kV Contact discharge: ±20kV – IEC61000-4-4 (EFT) 40A (5/50ns) RoHS Compliant Dimensions DFN1616-6 DM 1 Applications ● ● DP 2 USB ID 3 Gnd 6 VBus 5 NC 4 NC Pin Configuration USB 2.0 USB STG 6 DM 1 1 2 3 5.5V DP 2 USB ID 3 Gnd 6 VBus 5 NC 4 NC 12V GND Mechanical Characteristics ● Package: DFN1616-6 ● Lead Finish: Lead Free ● UL Flammability Classification Rating 94V-0 ● Quantity Per Reel:3,000pcs ● Reel Size:7 inch Marking Information 3603 = Device Marking Code Dot denotes Pin1 Rev : 01.06.2014 1/6 www.leiditech.com ULC3654N Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 100 W Peak Pulse Current (8/20µs) IPP 5 A DP, DM, USB ID (Pins 1, 2, 3) ESD per IEC 61000−4−2 (Air) ±25 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range ±20 kV TJ −55 to +125 °C Tstg −55 to +150 °C Peak Pulse Power (8/20µs) Ppk 300 W Peak Pulse Current (8/20µs) IPP 4 A Storage Temperature Range VBus (Pin 6) ESD per IEC 61000−4−2 (Air) ±25 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range ±20 kV TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition 5.5 V Any I/O to ground V IT = 1mA, any I/O to ground VRWM = 5.5V, any I/O to ground DP, DM, USB ID TVS Reverse Working Voltage Breakdown Voltage VRWM VBR 6.5 Reverse Leakage Current IR 0.5 µA Clamping Voltage VC 10 V Clamping Voltage VC 20 V Junction Capacitance CJ 0.5 pF VR = 0V, f = 1MHz, between I/O pins Junction Capacitance CJ 0.8 pF VR = 0V, f = 1MHz, any I/O pin to ground IPP = 1A (8 x 20µs pulse), any I/O pin to ground IPP = 5A (8 x 20µs pulse), any I/O pin to ground Note: I/O Pins are 1, 2, 3 Rev : 01.06.2014 2/6 www.leiditech.com ULC3654N Parameter Symbol Min Typ Max Unit Test Condition 36 V Pin 6 to ground 45 V IT = 1mA, pin 6 to ground VRWM = 12V, pin 6 to ground VBus TVS Reverse Working Voltage Breakdown Voltage VRWM VBR 38 Reverse Leakage Current IR 0.2 µA Clamping Voltage VC 50 V Clamping Voltage VC 75 V Junction Capacitance CJ 100 pF Rev : 01.06.2014 3/6 IPP = 1A (8 x 20µs pulse), pin 6 to ground IPP = 12A (8 x 20µs pulse), pin 6 to ground VR = 0V, f = 1MHz, pin 6 to ground www.leiditech.com ULC3654N Typical Performance Characteristics (TA=25°C unless otherwise Specified) 10 Peak Pulse Power_Ppp (W) Junction Capacitance_Cj (pF) 1 0.8 0.6 0.4 0.2 1 0.1 0.01 0 0 1 2 3 4 Reverse Voltage_VR (V) 0.1 5 10 100 1000 Pulse Duration_tp (us) Peak Pulse Power vs. Pulse Time Junction Capacitance vs. Reverse Voltage 120 16 14 100 12 % of Rated Power Clamping Voltage_Vc (V) 1 10 8 6 4 80 60 40 20 2 0 0 0 1 2 3 4 5 Peak Pulse Current_Ipp (A) 0 6 Clamping Voltage vs. Peak Pulse Current 25 50 75 100 125 Ambient Temperature_Ta(℃) 150 Power Derating Curve 100 % of Peak Pulse Current 90 80 70 60 50 40 30 20 10 0 0 20 40 Time_t(uS) 60 80 ESD Clamping Voltage 8 X 20us Pulse Waveform 8 kV Contact per IEC61000−4−2 Rev : 01.06.2014 4/6 www.leiditech.com ULC3654N ULC1654N on USB Port Application 1 V BUS 2 D– 3 D+ 4 ID 5 GND MICRO-USB 6 1 7 2 4 3 Rev : 01.06.2014 5 5/6 www.leiditech.com ULC3654N DFN1616-6 Package Outline Drawing Suggested Land Pattern P X Z F G DIM B C P F G X Y Z (C) Y DIMENSIONS INCHES MILLIMETERS .051 1.30 .060 1.52 .020 0.50 .018 0.45 .035 0.89 .012 0.30 .025 0.63 .085 2.15 B Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2014 6/6 www.leiditech.com
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