2SC2712

Plastic-Encapsulate Transistors FEATURES 2SC2712 (NPN) Low Noise: NF=1 dB (Typ),10dB(MAX) Complementary to 2SA1162 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 150 mA 1. BASE Collector Power Dissipation PC 150 mW 2. EMITTER Junction Temperature TJ 125 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter SOT-23 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= 100μA, IE=0 60 V Collector-emitter breakdown voltage VCEO IC=1mA , 50 V Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 5 V Collector cut-off current ICB VCB= 60 V, IE=0 0.1 μA Emitter cut-off current O IEB VEB=5V, IC=0 0.1 μA DC current gain O hFE VCE=6V, IC=2mA Collector-emitter saturation voltage VCE(sat) fT Transition frequency IB=0 70 IC= 100mA, IB=10mA 700 0.1 VCE=10V, IC= 1mA 0.25 V 80 MHz Output capacitance Cob VCB=10V, IE=0,f=1 MHz 2.0 3.5 pF Noise Figure NF VCE=6V,IC=0.1mA,f=1kH 1.0 10 dB z, Rg=10kΩ CLASSIFICATION OF hFE Marking LO Range 70-140 LY 120-240 GUANGDONG HOTTECH LG 200-400 INDUSTRIAL CO., LTD LL 350-700 Page:P2-P1 Plastic-Encapsulate Transistors 2SC2712 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2