BC547B

BC546/BC547/BC548(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features
High Voltage Complement to BC556,BC557,BC558
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units BC546 BC547 BC548 80 50 30 BC546 BC547 BC548 65 45 30 V 6 V IC Collector Current -Continuous 100 mA PD Total Device Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO VEBO Emitter-Base Voltage V Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain conditions MIN MAX UNIT BC546 BC547 BC548 VCBO IC= 100μA , IE=0 80 50 30 V BC546 BC547 BC548 VCEO IC= 1mA , IB=0 65 45 30 V VEBO IE= 10μA, IC=0 6 V Emitter-base breakdown voltage Collector cut-off current Test BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546A/BC547A/BC548A BC546B/BC547B/BC548B BC546C/BC547C/BC548C ICBO ICEO IEBO hFE VCB= 70V, IE=0 VCB= 50 V, IE=0 VCB= 30V, IE=0 VCE= 60 V, IB=0 VCE= 45 V, IB=0 VCE= 30 V, IB=0 VEB= 5V, IC=0 VCE=5V, IC= 2mA 110 110 110 110 200 420 0.1 μA 0.1 μA 0.1 μA 800 800 800 220 450 800 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 100mA, IB=5mA 1.1 V fT VCE= 5V, IC= 10mA f = 100MHz Transition frequency Revision:20170701-P1 ht t p : // www.lgesem i .c o m 150 MHz mail:lge@lgesemi.com BC546/BC547/BC548(NPN) TO-92 Bipolar Transistors Typical Characteristics Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BC546/BC547/BC548(NPN) TO-92 Bipolar Transistors Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com