ESD0506S8

ESD0506S8 6-Line Low Capacitance TVS Diode Array Description Mechanical Characteristics The ESD0506S8 is a low capacitance TVS array, utiliz ing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. The ESD0506S8 has low capacitance with a typical value at 8pF, and complies with the IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV contact discharge. It is assembled into a 8-pin lead-free SO-8 package. The combination of small size, low capacitance and high level of ESD protection makes it ideal for cellular, notebooks, desktops, and other portable application. • Package: SO-8 • Lead Finish: Matte Tin • Case Material: “Green” Molding Compound. • UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 3 per J-STD-020 • Terminal Connections: See Diagram Below • Marking Information: See Below Features • Low capacitance: 8pF typical (I/O to GND) • Ultra low leakage: nA level • Low operating voltage: 5V • Low clamping voltage • Up to 6 lines protects • JEDEC SO-8 package • Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±15kV Contact discharge: ±8kV – IEC61000-4-4 (EFT) 40A (5/50ns) • Applications • Cellular Handsets and Accessories • Personal Digital Assistants • Notebooks and Handhelds • Portable Instrumentation • Digital Cameras • Peripherals • Audio Players • Keypads, Side Keys, LCD Displays Marking Information 56S8 Dot indicates pin1 56S8 = device marking code RoHS Compliant Dimensions and Pin Configuration 8 8 7 6 7 6 Ordering Information 5 5 Part Number Packaging Reel Size ESD0506S8 2500/Tape & Reel 13 inch 56S8 1 2 3 4 1 Circuit Schematic Rev : 01.06.2014 2 3 4 Pin Schematic 1/4 www.leiditech.com ESD0506S8 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 25 W Peak Pulse Current (8/20µs) IPP 2 A ESD per IEC 61000−4−2 (Air) ±15 VESD ESD per IEC 61000−4−2 (Contact) Operating Temperature Range Storage Temperature Range kV ±8 TJ −55 to +125 °C Tstg −55 to +150 °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Working Voltage Breakdown Voltage Symbol Min Typ VRWM VBR Max Unit 5 V 6 Test Condition V IT = 1mA, any I/O to GND Reverse Leakage Current IR 0.1 µA VRWM = 5V Clamping Voltage VC 10.5 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 12.5 V IPP = 2A (8 x 20µs pulse) Junction Capacitance CJ 10 pF VR = 0V, f = 1MHz, any I/O to GND Note 1: I/O pins are 1, 2, 3, 4, 5 and 8. GND pins are 6, 7. Rev : 01.06.2014 2/4 www.leiditech.com ESD0506S8 Typical Performance Characteristics (TA=25°C unless otherwise Specified) 10 9 Peak Pulse Power_Ppp (W) Junction Capacitance_Cj(pF) 10 8 7 6 5 4 3 2 1 1 0.1 0.01 0 0.1 0 1 2 3 4 5 Reverse Voltage_VR(V) Junction Capacitance vs. Reverse Voltage 10 100 1000 Pulse Duration_tp (us) Peak Pulse Power vs. Pulse Time 120 100 90 100 80 % of Rated Power % of Peak Pulse Current 1 70 60 50 40 30 20 80 60 40 20 10 0 0 0 20 40 Time_t(uS) 60 80 0 25 50 75 100 125 Ambient Temperature_Ta(℃) 150 Power Derating Curve 8 X 20uS Pulse Waveform ESD Clamping Voltage 8 kV Contact per IEC61000−4−2 Rev : 01.06.2014 3/4 www.leiditech.com ESD0506S8 SO-8 Package Outline Drawing DIMENSIONS SY M A A1 A2 b c MILLIMETERS MIN 1.35 0.10 1.25 0.31 0.17 NOM INCHES MAX 1.75 0.25 1.65 0.51 0.25 MIN 0.053 0.004 0.049 0.012 0.007 NOM MAX 0.069 0.010 0.065 0.020 0.010 D 4.80 4.90 5.00 0.189 0.193 0.197 E1 3.80 3.90 4.00 0.150 0.154 0.157 E e h 6.00 BSC 1.27 BSC 0.25 L 0.40 L1 N θ1 aaa bbb ccc 0.72 0.236 BSC 0.050 BSC 0.50 0.010 1.04 0.016 (1.04) 8 0° 0.020 0.028 0.041 (0.041) 8 8° 0° 0.10 0.25 0.20 8° 0.004 0.010 0.008 Suggested Land Pattern SYM DIMENSIONS MILLIMETERS INCHES C (5.20) 0.205 G 3.00 0.118 P 1.27 0.050 X 0.60 0.024 Y 2.20 0.087 Z 7.40 0.291 Contact Information Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2014 4/4 www.leiditech.com