1N4448WT

    Silicon Epitaxial Planar Switching Diode PINNING Fast Switching Diode DESCRIPTION PIN 1 Cathode 2 Anode   1       Absolute Maximum Ratings (Ta = 25 OC) Parameter 2     A   Top View Marking Code: "A" Simplified outline SOD-523 and symbol Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 80 V IF(AV) 125 mA Forward Continuous Current IFM 250 mA Non-Repetitive Peak Forward Surge Current (at t = 1 µs) IFSM 0.5 A Power Dissipation Pd 150 mW Junction Temperature Tj 150 O Tstg - 65 to + 150 O Average Rectified Forward Current Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 10 mA at IF = 100 mA at IF = 150 mA       Reverse Leakage Current at VR = 80 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC     Symbol Min. VF 0.62 - IR   Reverse Breakdown Voltage at IR = 100 µA   Capacitance at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, Irr = 0.1 X IR , RL = 100 Ω V(BR)R 80 Max.         0.72 0.855 1 1.25 - trr -       V   100 25 50 30 nA nA µA µA -   Ctot Unit V   4 pF 4 ns 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.     2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.     PACKAGE OUTLINE SOD-523 Plastic surface mounted package; 2 leads 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.