1SS355

Silicon Epitaxial Planar Switching Diode Features • Small plastic package suitable PINNING PIN for surface mounted design DESCRIPTION 1 Cathode 2 Anode 2 1 • High reliability with high surge current handling capability Top View Marking Code: "Ｔ４" Simplified outline SOD-323 and symbol Applications • High speed switching Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit Peak Reverse Voltage VRM 90 V Reverse Voltage VR 80 V IF(AV) 100 mA Peak Forward Current IFM 225 mA Surge Forward Current (1 s) IFSM 500 mA Tj 150 O Tstg - 55 to + 150 O Symbol Max. Unit Forward Voltage at IF = 100 mA VF 1.2 V Reverse Current at VR = 80 V IR 0.1 µA Capacitance between Terminals at VR = 0.5 V, f = 1 MHz CT 3 pF Reverse Recovery Time at VR = 6 V, IF = 10 mA, RL = 100 Ω trr 4 ns Average Rectified Forward Current Junction Temperature Storage Temperature Range C C Electrical Characteristics (Ta = 25 C) O Parameter 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. 2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.