MMBTSA1015

MMBTSA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. As complementary type the NPN transistor MMBTSC1815 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) O Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 150 mA Base Current -IB 50 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 65 to +150 O C C Characteristics at Ta = 25 C O Parameter DC Current Gain at -VCE = 6 V, -IC = 2 mA at -VCE = 6 V, -IC = 150 mA Collector Base Cutoff Current at -VCB = 50 V Emitter Base Cutoff Current at -VEB = 5 V Collector Base Breakdown Voltage at -IC =100 µA Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Base Emitter Saturation Voltage at -IC = 100 mA, -IB = 10 mA Gain Bandwidth Product at -VCE = 10 V, -IC = 1 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Page 1 of 3 Current Gain Group O Y G Symbol Min. Max. Unit hFE hFE hFE hFE 70 120 200 25 140 240 400 - - -ICBO - 0.1 µA -IEBO - 0.1 µA -V(BR)CBO 50 - V -V(BR)CEO 50 - V -V(BR)EBO 5 - V -VCE(sat) - 0.3 V -VBE(sat) - 1.1 V fT 80 - MHz COB - 7 pF 6/4/2011 Page 2 of 3 6/4/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 3 of 3 SOT-23 6/4/2011