C1815

C1815 TRANSISTOR (NPN) FEATURE SOT-23 Power dissipation 1．BASE 2．EMITTER 3．COLLECTOR MARKING : HF MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature ℃ -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100µA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, 50 V IB=0 Collector cut-off current ICBO VCB=60V, IE=0 0.1 µA Collector cut-off current ICEO VCE=50V, IB=0 0.1 µA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 µA DC current gain hFE VCE= 6V, IC= 2mA 200 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V VCE=10V, IC= 1mA, Transition frequency Page 1 of 3 fT f=30MHz 80 MHz 5/31/2011 Typical Characteristics Page 2 of 3 C1815 5/31/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 32 of 3 SOT-23 5/31/2011 5/31/2011