BAV70W

BAV70W Silicon Epitaxial Planar Switching Diode Features • Fast switching diode • Ultra small surface mount package 3 1 2 Marking Code: A4 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF 175 100 mA IFRM 500 mA IFSM 0.5 1 4 A Ptot 200 mW Tj 150 O Tstg - 65 to + 150 O Continuous Forward Current Single diode loaded Double diode loaded Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Reverse Breakdown Voltage at IR = 100 µA Symbol Min. Max. Unit VBR(R) 75 - V - 0.715 0.855 1 1.25 - 30 2.5 60 100 nA µA µA µA Ctot - 2 pF trr - 4 ns Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF Reverse Leakage Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR Diode Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 10 mA, Irr = 0.1 IR, RL = 100 Ω page 1 of 3 V 11/28/2013 BAV70W page 2 of 3 11/28/2013 Symbol A A1 A2 b c D E E1 e e1 L L1 θ page 3 of 3 Dimensions In Millimeters Max. Min. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP. 1.200 1.400 0.525 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP. 0.047 0.055 0.021 REF. 0.010 0.018 0° 8° 11/28/2013