2SB772PU

2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications MARKING:B772 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 3 A Peak Collector Current (t = 10 ms) -ICP 7 A Base Current -IB 0.6 A Total Power Dissipation @ Ta = 25 C PD 1 W Total Power Dissipation @ Tc = 25 OC PD 10 W Tj , Tstg - 65 to + 150 O Operating and Storage Junction Temperature Range C O Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 2 V, -IC = 20 mA Current Gain Group at -VCE = 2 V, -IC = 1 A Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 3 V Collector Base Breakdown Voltage at -IC = 1 mA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 1 mA Collector Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Base Emitter Saturation Voltage at -IC = 2 A, -IB = 200 mA Current Gain Bandwidth Product at -VCE = 5 V, -IC = 100 mA, Output Capacitance at -VCB = 10 V, f = 1 MHz Page 1 of 3 R Q P E Symbol Min. Typ. Max. Unit hFE hFE hFE hFE hFE 30 60 100 160 200 - 120 200 320 400 - -ICBO - - 1 µA -IEBO - - 1 µA -V(BR)CBO 40 - - V -V(BR)CEO 30 - - V -V(BR)EBO 5 - - V -VCE(sat) - - 0.5 V -VBE(sat) - - 2 V fT - 80 - MHz Cob - 55 - pF 7/26/2012 Static Characteristic -1.8 -7.5mA COMMON EMITTER Ta=25℃ -1.6 —— IC COMMON EMITTER VCE= -2V -6.75mA -1.2 -4.5mA -1.0 -3.75mA -5.25mA -2.25mA -0.6 -1.5mA -0.4 -0.2 DC CURRENT GAIN 1000 -3.0mA -0.8 hFE (A) IC -6.0mA -1.4 COLLECTOR CURRENT hFE 10000 Ta=100℃ Ta=25℃ 100 IB=-0.75mA -0.0 -0.0 10 -0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR-EMITTER VOLTAGE VCEsat —— -1000 -3.0 -3.5 -1 -10 -100 COLLECTOR CURRENT VCE (V) VBEsat —— IC IC -1000 -3000 -1000 -3000 (mA) IC -1500 β=10 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1200 -100 Ta=100 ℃ Ta=25℃ -10 -1 -1 -10 -100 COLLECTOR CURRENT IC -3000 —— -1000 IC Ta=25℃ Ta=100 ℃ -300 -3000 -1 (mA) -10 -100 COLLECTOR CURREMT VBE fT 200 —— IC (mA) IC (MHz) TRANSITION FREQUENCY -10 T= a 25 ℃ T a =1 00 ℃ -100 100 fT (mA) IC -600 COMMON EMITTER VCE= -2V -1000 COLLECTOR CURRENT -900 -1 COMMON EMITTER VCE=-5V Ta=25℃ -0.1 -300 -400 -500 -600 -700 -800 -900 -1000 -1100-1200 BASE-EMMITER VOLTAGE VBE (mV) PC COLLECTOR POWER DISSIPATION PC (W) 0.6 —— 10 -4.23 -10 COLLECTOR CURRENT -100 IC (mA) Ta 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE Page 2 of 3 100 Ta 125 150 (℃ ) 7/26/2012 2SB772U SOT-89 PACKAGE OUTLINE Page 3 of 3 7/26/2012