BAV70

BAV70 Dual Switching Diode Common Cathode Features  AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS to r Compliant SOT−23 MAXIMUM RATINGS (EACH DIODE) Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Symbol Max Unit PD 225 mW Peak Forward Surge Current THERMAL CHARACTERISTICS 1.8 RqJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C PD CR O RqJA Junction and Storage Temperature TJ, Tstg mW/C 556 C/W 300 mW 2.4 mW/C 417 C/W −55 to +150 C Se Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Ambient 2 ANODE MARKING DIAGRAM co Total Device Dissipation FR− 5 Board (Note 1) TA = 25C Derate above 25C 3 CATHODE mi Characteristic ANODE 1 uc Value nd Symbol Rating JS MI Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. www.jsmsemi.com 3 A4 2 1 A4= Device Code ORDERING INFORMATION Device Package Shipping† BAV70 SOT −23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 第１页，共３页 BAV70 Dual Switching Diode Common Cathode ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Each Diode) Symbol Characteristic V(BR) IR Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF 70 − − − − 60 2.5 100 − 1.5 − − − − 715 855 1000 1250 − 6.0 uc Reverse Voltage Leakage Current (Note 3) (VR = 25 V, TJ = 150C) (VR = 70 V) (VR = 70 V, TJ = 150C) Max trr V mA pF mV ns nd Reverse Recovery Time RL = 100 W (IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1) Unit to r Reverse Breakdown Voltage (I(BR) = 100 mA) Min mi co 3. For each individual diode while second diode is unbiased. +10 V Se 820 W 2.0 k 100 mH IF tp tr 0.1 mF t IF trr 10% t CR O 0.1 mF 90% D.U.T. 50 W INPUT SAMPLING OSCILLOSCOPE JS MI 50 W OUTPUT PULSE GENERATOR IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.jsmsemi.com 第２页，共３页 BAV70 Dual Switching Diode Common Cathode SOT−23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. HE E c 1 DIM A A1 b c D E e L L1 HE q 2 e b 0.25 q A L A1 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10  MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 nd L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 to r SEE VIEW C 3 uc D PIN 1. ANODE 2. ANODE 3. CATHODE co VIEW C 0.95 0.037 Se 0.95 0.037 mi SOLDERING FOOTPRINT 2.0 0.079 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches JS MI CR O 0.9 0.035 www.jsmsemi.com 第３页，共３页