BSS138

BSS138 Plastic-Encapsulate MOSFETS V(BR)DSS ID RDS(on)MAX 3.5Ω@ 10V 50V SOT-23 0.22A 6.0Ω@4.5V 3 2.SOURCE 1 Equivalent Circuit uc 3) Drive circuits can be simple. 4) Parallel use is easy. 5) ESD protected 2KV HBM nd Applications Interfacing, switching (50V, 100mA) co ORDERING INFORMATION Marking Package Code BSS138 SS/J1 SOT-23 Symbol TA =25 o C unless otherwise noted Se Absolute Maximum Ratings mi Type No. Parameter V DSS Drain-Source Voltage V GSS Gate-Source Voltage ID Drain Current – Continuous (Note 1) Units 20 V 0.22 A V 0.88 CR O – Pulsed (Note 1) Derate Above 25C TJ , TSTG Operating and Storage Junction Temperature Range TL Maximum Lead Temperature for Soldering Purposes 1/16” from Case for 10 Seconds , JS MI Ratings 50 Maximum Power Dissipation Thermal Characteristics RθJA 3.DRAIN 2 to r Features 1) Low on-resistance. 2) Fast sw itching speed. PD 1.GATE Thermal Resistance, Junction-to-Ambient (Note 1) 0.36 W 2.8 mW/C −55 to +150 C 300 C 350 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity SS BSS138 7’’ 8mm 3000 units www.jsmsemi.com 第１／５页 BSS138 Plastic-Encapsulate MOSFETS T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Off Characteristics Typ Max BV DSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BV DS S ∆T J Breakdow n Voltage Temperature Coefficient ID = 250 A,Referenced to 25C IDSS Zero Gate Voltage Drain Current V DS = 50 V, V GS = 0 V 0.5 A V DS = 30 V, V GS = 0 V 100 nA V GS = 20 V, V DS = 0 V 100 nA 1.6 V On Characteristics V GS(th) ∆V GS(th) ∆T J 72 (N ote 2) 0.8 Gate Threshold Voltage VDS = VGS , Gate Threshold Voltage ID = 1 mA,Referenced to 25C Temperature Coefficient V mV/C to r Gate–Body Leakage. ID = 250 A ID = 1 mA uc IGSS 50 Units 1.3 –2 VGS = 10 V, I D = 0.22 A 3.5 VGS = 4.5 V, I D = 0.22 A 6.0 ID(on) On–State Drain Current V GS = 10 V, V DS = 5 V g FS Forward Transconductance VDS = 10V, I D = 0.22 A Ciss Input Capacitance Coss Output Capacitance Crss RG Reverse Transfer Capacitance tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) CR O Turn–On Delay Time V GS = 15 mV, V DD = 30 V, V GS = 10 V, Se Switching Characteristics V GS = 0 V, mi V DS = 25 V, f = 1.0 MHz Gate Resistance td(on) co Dynamic Characteristics nd Static Drain–Source On–Resistance RDS(on) V DS = 25 V, V GS = 10 V f = 1.0 MHz ID = 0.29 A, RGEN = 6 Ω I D = 0.22 A, mV/C Ω 0.2 A 0. 12 S 27 pF 13 pF 6 pF 9 Ω 2.5 5 ns 9 18 ns 20 36 ns 7 14 ns 1.7 2.4 nC 0.1 nC 0.4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, I S = 0.44 A (Note Voltage JS MI V SD www.jsmsemi.com 2) 0.8 0.22 A 1.4 V 第２／５页 BSS138 Plastic-Encapsulate MOSFETS Typical Characteristics 1 V GS = 10V 6.0V 4.5V 3.4 3. 5V 0.8 3 V GS = 2.5V 3.0 V 2. 0.6 62. 3.0V 2.5 V 1. 2 0.4 3.5V 0.2 2.0V 4 1 0 0 0.5 1 1.5 2 2.5 0 3 0.2 0.6 4.5V 0.4 6.0V 0.6 10V 0.8 1 ID , DRAIN CURRENT (A) uc V DS , DRAIN TO SOURCE VOLTAGE (V) 4.0V to r 81. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. nd Figure 1. On-Region Characteristics. 2 4.1 ID = 2 20mA 1. 10V ID = 1 10mA 3.5 co V GS = 81. 2.9 61. T A = 125 oC 2.3 mi 41. 1.7 2 TA = 25 o C 1.1 -50 -25 0 80. 25 50 75 Se 1 0. 100 125 0.5 150 0 2 6 0. V DS = T A = -55 oC 6 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 V GS = 0V 25 oC 0.1 125 o C JS MI 60. 10V CR O Figure 3. On-Resistance Variation with Temperature. 4 V GS , GATE TO SOURCE VOLTAGE (V) T J , JUNCTION TEMPERATURE ( o C) TA = 125 o C 50. 25 o C 0.01 40. -55 o C 30. 0.001 20. 1 0.5 0 1 1.5 0.0001 2 2.5 3 3.5 0 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.jsmsemi.com 第３／５页 BSS138 Plastic-Encapsulate MOSFETS Typical Characteristics 10 100 ID = 220mA V DS = 8V f = 1 MHz V GS = 0 V 25 V 80 8 30V 60 4 40 2 20 0 0 C ISS C OSS to r 6 C RSS 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 1.8 10 3 100ms 1s DC 0.1 2 mi V GS = 10V SINGLE PULSE R θJA = 350 oC/W T A = 25 oC 1 1 10 100 0 0.001 0.01 0.1 1 V DS, DRAIN-SOURCE VOLTAGE (V) 0.2 0.1 JS MI 0.1 P(pk) 0.02 t1 0.01 t2 TJ - T A = P * R θJA (t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 1000 RθJA(t) = r(t) * RθJA R θJA = 350 o C/W 0.05 0.01 100 Figure 10. Single Pulse Maximum Power Dissipation. CR O D = 0.5 10 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. 1 SINGLE PULSE RθJA = 350°C/W T A = 25°C co 1ms 10ms Se 0.001 4 100s 0.01 50 uc 5 0.1 40 Figure 8. Capacitance Characteristics. 10 R DS(ON) LIMIT 30 nd Figure 7. Gate Charge Characteristics. 1 20 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) 0.01 0.1 1 10 100 1000 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1a. Transient thermal response will change depending on the circuit board design. www.jsmsemi.com 第４／５页 BSS138 Plastic-Encapsulate MOSFETS PACKAGE OUTLINE Plastic surface mounted package SOT-23 A SOT-23 E K A B B 0.95 1.10 E 0.35 0.48 G nd 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 All Dimensions in mm JS MI CR O 0.95 0.90 Se SOLDERING FOOTPRINT 1.50 0.50 mi C 1.10 0.30 co G H 3.10 D J D Max 2.70 uc C Min to r Dim 2.00 0.90 Unit: mm 0.80 PACKAGE INFORMATION Device Package Shipping BSS138 SOT-23 3000 pcs / Tape & Reel www.jsmsemi.com 第５／５页