MMBT2907A

MMBT2907A PNP General Purpose Amplifier FEATURES  Epitaxial planar die construction.  Complementary NPN type available MMBT2222A.  Ideal for medium power amplification and switching.  MSL 1 2F APPLICATIONS  This device is designed as a general purpose amplifier  SOT-23 JS and switching. The useful dynamic range extends to 600mA as a switch MI and to 100MHz as a amplifier. O CR mi Se MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Total Device Dissipation RθjA RθjC TJ, TSTG V -60 V -5 V -600 mA 300 mW Thermal Resistance Junction to Ambient 417 °C/W Thermal Resistance Junction to Case 250 °C/W Junction and Storage Temperature www.jsmsemi.com -55 to +150 r PD -60 to Collector Current -Continuous Unit uc IC Value nd VCBO co Symbol °C/W 第１／５页 MMBT2907A PNP General Purpose Amplifier ESD RATING Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-10μA IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA IC=0 -5 V Collector cut-off current Collector cut-off current Base cut-off current O CR MI JS Parameter MAX UNIT ICBO VCB=-50V IE=0 VCB=-50V IE=0 TA=125℃ -10 -10 nA μA ICEX VCE=-30V,VBE(OFF)=-0.5V -50 nA IBL VCE=-30V,VBE(OFF)=-0.5V -50 nA Collector-emitter saturation voltage VCE(sat) IC=-150mA IB=-15mA IC=-500mA IB=-50mA Base-emitter saturation voltage VBE(sat) IC=-150mA IB=-15mA IC=-500mA IB=-50mA Transition frequency fT VCE=-20V IC=-50mA f=100MHz Output Capacitance Cobo VCB=-10V f=100kHz IE=0 - 8.0 pF Input Capacitance Cibo VEB=-2V f=100kHz IC=0 - 30 Delay time td 10 ns Rise time tr VCE=-30V, IC=-150mA, IB1=-15mA r pF 40 ns Storage time ts 225 ns Fall time tf 60 ns DC current gain 75 100 100 100 50 300 -0.4 -1.6 V -1.3 -2.6 V uc nd co mi Se hFE VCE=-10V IC=-100μA VCE=-10V IC=-1mA VCE=-10V IC=-10mA VCE=-10V IC=-150mA VCE=-10V IC=-500mA 200 to VCE=-6V, IC=-150mA IB1=-IB2=-15mA www.jsmsemi.com MHz 第２／５页 MMBT2907A PNP General Purpose Amplifier TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified O CR MI JS r to uc nd co mi Se www.jsmsemi.com 第３／５页 MMBT2907A PNP General Purpose Amplifier O CR MI JS r to uc nd co mi Se www.jsmsemi.com 第４／５页 MMBT2907A PNP General Purpose Amplifier PACKAGE OUTLINE Plastic surface mounted package SOT-23 A SOT-23 Dim Min Max A 2.70 3.10 B 1.10 1.50 C 0.90 1.10 D 0.30 0.50 E 0.35 0.48 G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 E K B JS J D MI G CR H C O 0.95 0.95 nd co mi Se SOLDERING FOOTPRINT All Dimensions in mm 0.90 r Unit : mm 0.80 to uc 2.00 PACKAGE INFORMATION Device Package Shipping MMBT2907A SOT-23 3000 pcs / Tape & Reel www.jsmsemi.com 第５／５页