S9014

S9014 Silicon Epitaxial Planar Transistor FEATURES Complementary to S9015 Excellent hFE linearity J6 Power dissipation (PC = 0.2W) to r APPLICATIONS Per-Amplifier low level & low noise mi co nd uc SOT-23 VCBO VCEO Value Units 50 V Collector-Emitter Voltage 45 V Emitter-Base Voltage 5 V Collector-Base Voltage JS MI VEBO Parameter CR O Symbol Se MAXIMUM RATING @ TA=25℃ unless otherwise specified IC Collector Current -Continuous 100 mA PC Collector Dissipation 200 mW -55 to +150 ℃ TJ, TSTG Junction and Storage Temperature www.jsmsemi.com 第１／５页 S9014 Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 Collector cut-off current ICBO VCB=50V,IE=0 Collector cut-off current ICEO VCE=35V,IB=0 Emitter cut-off current IEBO VEB=3V,IC=0 DC current gain hFE VCE=5V,IC=1mA Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA Base-emitter saturation voltage VBE(sat) Transition frequency to r MAX UNIT 200 V 0.1 μA 0.1 μA 0.1 μA 1000 mi co nd uc 5 IC=100mA, IB= 5mA 0.3 V 1 V VBE (on ) VCE=5V, IC=2mA 0.7 V Cob VCB=10V, IE=0, f=1MHz 3.5 pF CR O Output capacitance TYP Se Base-emitter on voltage MIN VCE=6V, IC= 20mA f=30MHz fT 150 MHz JS MI CLASSIFICATION OF hFE(1) Rank L H Range 200-450 450-1000 www.jsmsemi.com 第２／５页 S9014 Silicon Epitaxial Planar Transistor TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified hFE Static Characteristic 8 1000 Ta=100℃ 18uA Ta=25℃ 12uA 10uA 8uA 2 6uA 100 4uA IB=2uA 0 2 4 6 COLLECTOR-EMITTER VOLTAGE VCEsat —— (V) COMMON EMITTER VCE= 5V 1 10 COLLECTOR CURRENT IC VBEsat —— IC 100 (mA) IC co 2 1 Ta=25℃ mi BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 0.1 Ta=100℃ Se COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 1 VCE 10 0.1 8 nd 0 uc 14uA 4 to r hFE 16uA DC CURRENT GAIN (mA) 20uA 6 IC COLLECTOR CURRENT COMMON EMITTER Ta=25℃ —— IC Ta=25℃ Ta=100℃ β=20 β=20 CR O 1 10 COLLECTOR CURRENT (mA) (mA) IC COLLECTOR CURRENT Ta=25℃ COMMON EMITTER VCE= 5V 0.3 fT 1000 1 0.1 0.0 10 IC 100 (mA) —— IC (MHz) JS MI —— VBE Ta=100℃ 10 1 COLLECTOR CURRENT 0.6 0.9 fT IC 100 IC 0.1 0.1 100 100 TRANSITION FREQUENCY 0.01 0.1 10 COMMON EMITTER VCE=5V Ta=25℃ 1.2 1 0.1 1 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) www.jsmsemi.com 10 IC 100 (mA) 第３／５页 S9014 Silicon Epitaxial Planar Transistor Cob - VCB 5 F=1MHZ 4.5 3.5 to r 3 2.5 2 uc 1.5 1 0 5 10 15 20 25 30 CR O Se mi co nd VR(V) JS MI Cj(PF） 4 www.jsmsemi.com 第４／５页 S9014 Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Min Max A 2.70 3.10 B 1.10 1.50 0.90 1.10 0.30 0.50 0.35 0.48 F 0.85 1.05 G 1.80 2.00 H 0.02 0.10 J 0.05 0.15 K 2.20 2.60 C D mi co nd uc E to r Dim 0.95 CR O 0.95 Se SOLDERING FOOTPRINT All Dimensions in mm JS MI 2.00 0.90 Unit: mm 0.80 PACKAGE INFORMATION Device Package Shipping S9014 SOT-23 3000pcs / Tape & Reel www.jsmsemi.com 第５／５页