S9018

S9018 Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation.(PC=200mW) SOT-23 APPLICATIONS NPN epitaxial silicon transistor. to r z Type No. uc ORDERING INFORMATION Marking J8 SOT-23 nd S9018 Package Code Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ CR O Se mi Symbol co MAXIMUM RATING @ Ta=25℃ unless otherwise specified ELECTRICAL CHARACTERISTICS @ Ta=25℃ Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 4 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 μA Collector cut-off current ICEO VCE=15V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=1mA Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10 mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA f=400MHz JS MI Parameter unless otherwise specified www.jsmsemi.com 70 600 TYP MAX UNIT 190 MHz 第１页，共３页 S9018 Silicon Epitaxial Planar Transistor JS MI CR O Se mi co nd uc to r TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.jsmsemi.com 第２页，共３页 S9018 Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A K B Dim Min Max A 2.85 2.95 B 1.25 C E H G 1.85 1.95 H 0.02 0.1 0.1Typical 2.35 2.45 All Dimensions in mm JS MI CR O Se mi co K SOLDERING FOOTPRINT 0.43 0.48 J C 0.37 0.35 nd G 1.35 1.0Typical uc D J D to r E PACKAGE Unit : mm INFORMATION Device Package Shipping S9018 SOT-23 3000/Tape&Reel www.jsmsemi.com 第３页，共３页