ZMM5V6

Silicon Epitaxial Planar Zener Diodes FEATURE LL-34 In MiniMELF case especially for automatic insertion. These diodes are also available in DO-35 case with the type designation BZX55C... 0.063(1.6) 0.055(1.4) 0.020(0.5) 0.012(0.3) 0.020(0.5) 0.012(0.3) 0.146(3.7) 0.130(3.3) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value 500 1) Unit Power Dissipation Ptot Junction Temperature Tj 175 O C Tstg - 55 to + 175 O C Symbol Max. Storage Temperature Range 1) mW Valid provided that electrodes are kept at ambient temperature Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air RθJA Forward Voltage at IF = 100 mA 1) VF 0.3 1 1) Unit K/mW V Valid provided that electrodes are kept at ambient temperature www.jsmsemi.com 第1/8页 Silicon Epitaxial Planar Zener Diodes Electrical Characteristics Notes: @ TA = 25°C unless otherwise specified 1. Tested with pulses tp = 20 ms. 2. Valid provided that electrodes are kept at ambient temperature. www.jsmsemi.com 第2/8页 Silicon Epitaxial Planar Zener Diodes Breakdown characteristics Tj = constant (pulsed) mA 50 Iz ZMM... Tj=25oC ZMM1 40 30 20 Test current Iz 5mA 10 0 0 1 2 3 4 5 6 7 8 9 10 V Vz Breakdown characteristics Tj = constant (pulsed) ZMM... mA 30 Tj=25oC ZMM10 ZMM12 Iz ZMM15 20 ZMM18 ZMM22 ZMM27 Test current Iz 5mA 10 ZMM33 ZMM36 0 0 10 20 30 40 V Vz www.jsmsemi.com 第3/8页 Silicon Epitaxial Planar Zener Diodes Breakdown characteristics Tj = constant (pulsed) mA 10 Iz ZMM... Tj=25oC ZMM39 ZMM51 ZMM43 ZMM47 8 Test current Iz 5mA 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 V Vz Admissible power dissipation versus ambient temperature Forward characteristics Valid provided that electrodes are kept at ambient temperature. mA 10 ZMM... mW 500 ZMM... 3 10 2 iF Ptot 400 10 Tj=100oC 1 300 o 10 10 10 10 Tj=25 C -1 200 -2 -3 100 -4 0 10-5 0 0.2 0.4 0.6 0.8 1V VF 0 200oC 100 Tamb www.jsmsemi.com 第4/8页 Silicon Epitaxial Planar Zener Diodes Pulse thermal resistance versus pulse duration Dynamic resistance versus Zener current Valid provided that the electrodes are kept at ambient temperature. K/W ZMM... 3 10 Tj=25oC 7 5 5 4 rthA rzj 3 2 2 7 3 100 0.2 5 4 4 2 0.5 10 5 4 0.1 3 3 0.05 2 2 0.02 10 0.01 10 2v7 ZMM1 V=0 7 3v6 5 5 4 V= 2 tp 3 PI T 10-5 10-4 -3 10 -2 10 10 tp ZMM5v6 1 -1 0.1 10 S 1 2 5 1 2 5 10 2 Dynamic resistance versus Zener current pF 1000 ZMM... 100 ZMM... o Tj=25 C o Tj=25 C 7 rzj 5 4 5 4 3 VR=1V 3 33 2 VR=2V 27 22 10 18 100 7 5 15 5 4 V R=1V VR=2V 4 100mA 5 Iz Capacitance versus Zener voltage 2 5v1 2 T 1 4v7 4 tp 3 Ctot ZMM... 1000 12 3 10 3 2 6v8/8v2 ZMM6v2 2 1 10 1 2 3 4 5 10 2 3 4 5 0.1 2 5 1 2 5 10 2 5 100mA 100V Iz Vz at Iz=5 mA www.jsmsemi.com 第5/8页 Silicon Epitaxial Planar Zener Diodes Thermal differential resistance versus Zener voltage Dynamic resistance versus Zener current Valid provided that electrodes are kept at ambient temperature 3 ZMM... 10 7 rzth=RthA.Vz. 5 4 5 Vz Tj 3 4 rzj ZMM... 3 10 Tj=25oC 2 3 2 2 rzth 10 5 4 3 2 10 7 47v+51v 43v 39v 5 4 2 10 ZMM36 3 5 4 3 2 negative 2 10 0.1 2 3 4 5 1 2 3 10mA 4 5 positive 1 1 2 3 4 5 2 10 Iz 3 4 5 100V Vz at Iz=5 mA Temperature dependence of Zener voltage versus Zener voltage Dynamic resistance versus Zener voltage mV/K 25 ZMM... 100 ZMM... 7 5 rzj Vz Tj 4 3 20 5mA Iz=1mA 20mA 15 2 10 10 7 5 5 4 3 0 2 1 o Tj=25 C Iz=5 mA 1 2 3 4 5 10 2 3 4 5 100V Vz at Iz=5 mA www.jsmsemi.com -5 1 2 3 4 5 10 2 3 4 5 100V Vz at Iz=5 mA 第6/8页 Silicon Epitaxial Planar Zener Diodes Temperature dependence of Zener voltage versus Zener voltage mV/K Change of Zener voltage versus junction temperature V ZMM... 100 ZMM... 9 Iz=5 mA 8 80 Vz bei Iz=5mA 7 Vz Tj Vz 60 51V 6 43V 5 36V 4 40 3 2 1 20 0 0 0 20 40 60 80 Iz=5 mA -1 100V 0 20 40 60 80 100 Vz at Iz=5 mA Tj Change of Zener voltge from turn-on up to the point of thermal equilibrium versus Zener voltage Change of Zener voltage versus junction temperature V ZMM... 0.8 X) 25 Vz=35 V 0.7 V 1.6 15 1.4 10 0.6 Vz ZMM... Vz=rzth.Iz Iz=5 mA 1.2 Vz 0.5 1 8 0.4 0.8 7 0.3 0.6 6.2 0.2 0.4 5.9 0.1 0.2 5.6 0 0 5.1 -0.1 X) -0.2 o 140 C 120 0 20 at Iz=5 mA 40 60 80 1 3.6 100 -0.2 4.7 120 -0.4 o 140 C 1 2 3 4 5 10 2 3 4 5 100V Tj Vz at Iz=5 mA www.jsmsemi.com 第7/8页 Silicon Epitaxial Planar Zener Diodes Change of Zener voltge from turn-on up to the point of thermal equilibrium versus Zener voltage V ZMM... 5 Vz=rzth.Iz 4 Vz 3 Iz =5 mA 2 1 0 Iz =2 mA 0 20 40 60 80 100V Vz at Iz=5 mA www.jsmsemi.com 第8/8页