1N4148PF

1N4148PF Silicon Epitaxial Planar Switching Diode Features Max. 0.5 • Lead Free Max. 0.45 Min. 27.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Applications • High-speed switching Max. 1.9 Black Cathode Band XXX This diode is also available in MiniMELF case Black Part No. Max. 3.9 ST Min. 27.5 XXX Max. 2.9 Min. 27.5 with the type designation LL4148 Glass Case DO-34 Dimensions in mm Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 200 mA IFSM 0.5 1 4 A Ptot 500 mW Tj 200 ℃ Tstg - 65 to + 200 ℃ Symbol Max. Unit RθJL 350 ℃/W Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance - Junction to Lead 1) 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 1/3 ® Dated: 30/07/2021 Rev: 01 1N4148PF Characteristics at Ta = 25℃ Parameter Reverse Breakdown Voltage at IR = 100 µA at IR = 5 µA Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150℃ Capacitance at VR = 0, f = 1 MHz Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Reverse Recovery Time at IF = 10 mA, Irr = 1 mA, VR = 6 V, RL = 100 Ω Rectification Efficiency 1) at f = 100 MHz, VRF = 2 V Symbol Min. Max. Unit V(BR)R V(BR)R 100 75 - V V VF - 1 V IR IR IR - 25 5 50 nA µA µA Ctot - 4 pF Vfr - 2.5 V trr - 4 ns ηV 0.45 - - Vo 2nF 5K ~ ~ ~ VRF =2V 60 1) Rectification Efficiency Measurement Circuit 2/3 ® Dated: 30/07/2021 Rev: 01 1N4148PF Electrical Characteristics Curves Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature mW 1000 1N 4148 1N 4148 Tj=25 oC f=1MHz 900 1.1 800 Ctot(VR) Ctot(0V) 1.0 700 P tot 600 500 0.9 400 300 0.8 200 100 0.7 0 0 0 o 200 C 100 0 2 4 6 Tamb VR Leakage current versus junction temperature nA 10 4 10 V 8 Forward characteristics mA 1N 4148 10 1N 4148 3 5 2 10 2 10 3 IR o Tj=100 C iF 5 o Tj=25 C 10 2 10 2 5 1 2 10 10 -1 5 VR=20V 2 1 10 -2 0 o 200 C 100 0 Tj 1 2V VF 3/3 ® Dated: 30/07/2021 Rev: 01