VBMB1615

VBMB1615 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () ID (A)a 0.010 at VGS = 10 V 70 0.012 at VGS = 4.5 V 55 • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: TO-220 FULLPAK D G GDS S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C Symbol Limit Unit VGS ± 20 V 70 ID 50a IDM 200 Continuous Source Current (Diode Conduction) IS 50 Avalanche Current IAS 50 EAS 125 Pulsed Drain Current Single Avalanche Energy (Duty Cycle  1 %) Maximum Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C mJ 136 PD TJ, Tstg Operating Junction and Storage Temperature Range A a W 3b, 8.3b, c - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case Symbol t  10 sec Steady State RthJA RthJC Typical 15 40 Maximum 18 50 0.85 1.1 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t  10 s. 1 VBMB1615 www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ.a Max. 2 3 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS ID(on) On-State Drain Currentb 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 175 °C 250 VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Resistanceb RDS(on) ± 100 VDS = 60 V, VGS = 0 V Forward Transconductance Dynamic gfs 0.010 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Charge Qgd c Turn-On Delay Timec 0.016 VGS = 10 V, ID = 20 A, TJ = 175 °C 0.020 Turn-Off Delay Time c Fall Timec td(off)  0.012 60 S 2650 VGS = 0 V, VDS = 25 V, f = 1 MHz 470 pF 225 47 VDS = 30 V, VGS = 10 V, ID = 50 A 70 10 nC 12 td(on) tr Rise Timec µA 0.012 VGS = 10 V, ID = 20 A, TJ = 125 °C VDS = 15 V, ID = 20 A nA A 60 VGS = 4.5 V, ID = 15 A b V VDD = 30 V, RL = 0.6  ID  50 A, VGEN = 10 V, Rg = 2.5  tf 10 20 15 25 35 50 20 30 Source-Drain Diode Ratings and Characteristics (TC = 25 °C) ISM Pulsed Current 70 ns A Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1 1.5 V Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/µs 45 100 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBMB1615 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C unless noted) 100 200 VGS = 10 thru 5 V 80 4V I D - Drain Current (A) I D - Drain Current (A) 160 120 80 60 40 TC = 125 °C 20 40 25 °C 2 V, 3 V 0 0 0 2 4 6 8 10 - 55 °C 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 120 5 0.020 TC = - 55 °C 0.016 VGS = 4.5 V 25 °C 80 0.012 125 °C 60 RDS(on) - g fs - Transconductance (S) 100 40 20 0 0 10 20 30 ID - Drain Current (A) 40 50 VGS = 10 V 0.008 0.004 0.000 0 60 80 100 On-Resistance vs. Drain Current 10 4000 3000 V GS - Gate-to-Source Voltage (V) 3500 C - Capacitance (pF) 40 ID - Drain Current (A) Transconductance Ciss 2500 2000 1500 1000 Coss 500 0 20 Crss 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance 60 VDS = 30 V ID = 50 A 8 6 4 2 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge 3 VBMB1615 www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C unless noted) 100 2.0 VGS = 10 V ID = 20 A I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 4 1 0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.5 VBMB1615 www.VBsemi.com THERMAL RATINGS 1000 60 Limited by RDS(on)* 100 ID - Drain Current (A) ID - Drain Current (A) 50 40 30 20 100 µs 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 0.1 10 0 10 µs 0 25 50 75 100 125 150 175 TA - Ambient Temperature (°C) Maximum Drain Current vs. Ambient Temperature 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 5 VBMB1615 www.VBsemi.com TO-220 FULLPAK (HIGH VOLTAGE) E A A1 ØP n d1 d3 D u L1 V L b3 A2 b2 c b e DIM. A A1 A2 b b2 b3 c D d1 d3 E e L L1 n ØP u v ECN: X09-0126-Rev. B, 26-Oct-09 DWG: 5972 MIN. 4.570 2.570 2.510 0.622 1.229 1.229 0.440 8.650 15.88 12.300 10.360 13.200 3.100 6.050 3.050 2.400 0.400 MILLIMETERS 2.54 BSC MAX. 4.830 2.830 2.850 0.890 1.400 1.400 0.629 9.800 16.120 12.920 10.630 MIN. 0.180 0.101 0.099 0.024 0.048 0.048 0.017 0.341 0.622 0.484 0.408 13.730 3.500 6.150 3.450 2.500 0.500 0.520 0.122 0.238 0.120 0.094 0.016 Notes 1. To be used only for process drawing. 2. These dimensions apply to all TO-220, FULLPAK leadframe versions 3 leads. 3. All critical dimensions should C meet Cpk > 1.33. 4. All dimensions include burrs and plating thickness. 5. No chipping or package damage. 6 INCHES 0.100 BSC MAX. 0.190 0.111 0.112 0.035 0.055 0.055 0.025 0.386 0.635 0.509 0.419 0.541 0.138 0.242 0.136 0.098 0.020 VBMB1615 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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