VBL1307

VBM1307/VBL1307 www.VBsemi.com N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 30 RDS(on) () at VGS = 10 V 0.0075 RDS(on) () at VGS = 4.5 V 0.0095 ID (A) • Package with low thermal resistance • 100 % Rg and UIS tested 70 Configuration Single Package TO-220AB/ TO-263 TO-220AB D TO-263 G S G G D S D S N-Channel MOSFET Top View Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 70 50 IS 70 IDM 250 IAS 33 EAS 54 PD UNIT 71 23 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c RthJA 50 RthJC 2.1 °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). 1 VBM1307/VBL1307 www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic VDS VGS = 0 V, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V ± 100 IGSS IDSS ID(on) RDS(on) gfs - - VGS = 0 V VDS = 30 V - - VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 VGS = 10 V VDS  5 V 70 - - VGS = 10 V ID = 20 A - 0.006 0.0075 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0094 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0115 VGS = 4.5 V ID = 15 A - 0.008 0.0095 - 100 - - 1850 2200 VDS = 15 V, ID = 15 A V nA 1 μA A  S b Input Capacitance Ciss VGS = 0 V Output Capacitance Coss - 260 400 Reverse Transfer Capacitance Crss - 95 200 Total Gate Charge c Qg - 46 Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Qgs Fall Time c VDS = 20 V, ID = 50 A Qgd Rg f = 1 MHz td(on) tr Time c VGS = 10 V VDS = 25 V, f = 1 MHz td(off) VDD = 20 V, RL = 0.4  ID  50 A, VGEN = 10 V, Rg = 1  tf Source-Drain Diode Ratings and Characteristics pF 75 - 10 - - 8 - nC 1.3 2.8 4.5 - 9 15 - 19 30 - 26 40 - 10 15 - - 200 A - 0.87 1.5 V  ns b Pulsed Current a ISM Forward Voltage VSD IF = 30 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBM1307/VBL1307 www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 250 100 10000 VGS = 10 V thru 6 V 80 150 VGS = 4 V 100 50 1000 60 1st line 2nd line VGS = 5 V 2nd line ID - Drain Current (A) 2nd line ID - Drain Current (A) 200 40 100 TC = 25 °C TC = 125 °C 20 VGS = 3 V TC = -55 °C 0 0 0 4 8 12 16 20 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title 10000 Axis Title 0.010 10000 TC = -55 °C 1000 TC = 125 °C 80 100 40 0 2nd line RDS(on) - On-Resistance (Ω) 1000 120 1st line 2nd line 2nd line gfs - Transconductance (S) VGS = 4.5 V TC = 25 °C 160 10 20 30 40 0.006 VGS = 10 V 0.002 10 0 50 20 On-Resistance vs. Drain Current Axis Title 1000 100 Crss Coss 0 10 12 18 24 30 10000 ID = 50 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 1500 2nd line VGS - Gate-to-Source Voltage (V) Ciss 500 100 10 10000 1st line 2nd line 2nd line C - Capacitance (pF) 80 Transconductance Axis Title 6 60 ID - Drain Current (A) 2nd line 2500 0 40 ID - Drain Current (A) 2nd line 2000 100 0.004 0.000 10 0 0.008 1st line 2nd line 200 4 100 2 0 10 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge 50 3 VBM1307/VBL1307 www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 30 A TJ = 150 °C 10 VGS = 10 V 1000 1.7 VGS = 4.5 V 1.3 100 0.9 0.5 0 25 50 TJ = 25 °C 0.1 100 0.01 0.001 10 -50 -25 1000 1 10 0 75 100 125 150 175 0.2 0.4 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.6 10000 0.04 10000 1000 0.03 0.02 100 TJ = 150 °C 0.01 0 2 4 10 6 8 ID = 5 mA -0.6 ID = 250 μA -1.4 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title 55 10000 ID = 1 mA 52 1000 49 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 100 -1.0 TJ = 25 °C 0 1000 -0.2 1st line 2nd line 2nd line VGS(th) Variance (V) 0.2 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.6 TJ - Junction Temperature (°C) 2nd line 0.05 46 100 43 40 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature 4 1st line 2nd line 2nd line IS - Source Current (A) 2.1 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.5 VBM1307/VBL1307 www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 μs 10 ID limited 1000 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on) (1) 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) BVDSS limited 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Axis Title 1 Duty Cycle = 0.5 1000 Notes: 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 PDM 0.1 0.1 t1 0.05 t2 t1 t2 100 0.02 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient 5 VBM1307/VBL1307 www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6 VBM1307/VBL1307 www.VBsemi.com TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 0.040 b 0.69 1.01 0.027 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 J(1) 2.41 2.92 0.095 0.115 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) 7 VBM1307/VBL1307 www.VBsemi.com TO-263AB A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip DIM. MIN. View A - A INCHES MILLIMETERS 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. MIN. MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 2.54 BSC 0.25 BSC 4.78 5.28 0.100 BSC 0.070 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. 8 VBM1307/VBL1307 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.635 (9.017) (16.129) 0.355 (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 9 VBM1307/VBL1307 Disclaimer www.VBsemi.com All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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