VBL1154N

VBL1154N www.VBsemi.com N-Channel 150V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 45 0.042 at VGS = 7.5 V 42 • • • • • TrenchFET® Power MOSFETs 175 °C Junction Temperature New Low Thermal Resistance Package PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch D TO-263 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage Parameter VDS 150 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °Cc ID Unit V 45 31 IDM 140 IAR 50 EAR 80 A mJ b PD 160 3.7 W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Symbol Limit Junction-to-Ambient (PCB Mount TO-263c) Parameter RthJA 40 Junction-to-Case (Drain) RthJC 0.9 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). 1 VBL1154N www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 150 VGS(th) VDS = VGS, ID = 250 µA 4 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 150 V, VGS = 0 V 1 VDS = 120 V, VGS = 0 V, TJ = 125 °C 50 VDS = 120 V, VGS = 0 V, TJ = 175 °C 250 ID(on) Drain-Source On-State Resistancea RDS(on) VDS ≥ 5 V, VGS = 10 V 80 0.035 VGS= 7.5 V, I D = 10 A 0.042 VGS = 10 V, ID = 15 A, TJ = 125 °C Forward Transconductance gfs VDS = 15 V, ID = 15 A V nA µA A VGS = 10 V, ID = 15 A Ω 0.060 VGS = 10 V, ID = 15 A, TJ = 175 °C a 6 0.080 10 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 190 Rg 2 Gate Resistance Total Gate Charge c Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) c tr Turn-Off Delay Timec td(off) Rise Time Fall Timec 2200 VGS = 0 V, VDS = 25 V, f = 1 MHz 38 VDS = 75 V, VGS = 10 V, ID = 40 A pF 290 Ω 60 nC 13 13 VDD = 75 V, RL = 1.80 Ω ID ≅ 40 A, VGEN = 10 V, Rg = 2.5 Ω tf 15 25 130 200 30 45 90 140 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 40 Pulsed Current ISM 80 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 40 A, VGS = 0 V trr IRM(REC) Qrr IF = 40 A, dI/dt = 100 A/µs A 1.0 1.5 V 100 150 ns 5 8 A 0.25 0.6 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBL1154N www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 80 80 6V 60 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 8 V 40 20 60 40 TC = 125 °C 20 5V 25 °C 0 - 55 °C 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 80 0.08 60 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 25 °C 125 °C 40 20 0 VGS = 6 V VGS = 10 V 0.04 0.02 0.00 0 10 20 30 40 0 20 40 60 80 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 VGS - Gate-to-Source Voltage (V) 4000 3200 C - Capacitance (pF) 0.06 Ciss 2400 1600 800 VDS = 75 V ID = 40 A 16 12 8 4 Coss Crss 0 0 0 25 50 75 100 125 VDS - Drain-to-Source Voltage (V) Capacitance 150 0 15 30 45 60 75 Qg - Total Gate Charge (nC) Gate Charge 3 VBL1154N www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 2.7 VGS = 10 V ID = 15 A 2.1 I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 2.4 1.8 1.5 1.2 0.9 TJ = 25 °C TJ = 150 °C 10 0.6 0.3 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 0.9 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 195 ID = 1 mA V DS (V) 185 175 165 155 145 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 4 0.6 150 175 1.2 VBL1154N www.VBsemi.com THERMAL RATINGS 1000 45 100 I D - Drain Current (A) I D - Drain Current (A) 36 27 18 10 µs 100 µs 10 1 ms 1 9 0 0 25 50 75 100 125 150 175 Limited by RDS(on)* 0.1 0.1 10 ms 100 ms, DC TC = 25 °C Single Pulse 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TC - Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5 VBL1154N www.VBsemi.com TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e Detail “A” c E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 b2 0.045 0.055 1.143 1.397 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 6 MAX. Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.002 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 0.254 BSC - 0.050 VBL1154N www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 7 VBL1154N www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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