0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
VBL1101N

VBL1101N

  • 厂商:

    VBSEMI(微碧)

  • 封装:

    TO-263

  • 描述:

    MOS管 N-Channel VDS=100V VGS=±20V ID=100A RDS(ON)=10mΩ@10V TO263

  • 数据手册
  • 价格&库存
VBL1101N 数据手册
VBL1101N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.010 at VGS = 10 V 100 0.023 at VGS = 4.5 V 85 • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC D TO-263 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) Avalanche Current L = 0.1 mH Single Pulse Avalanche Energyb Maximum Power Dissipationb 75 a IDM Pulsed Drain Current TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)d A 300 IAS 75 EAS 280 250 PD mJ c W 3.75 TJ, Tstg Operating Junction and Storage Temperature Range V 100 ID TC = 125 °C Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Symbol PCB Mount (TO-263)d Free Air (TO-220AB) RthJA RthJC Limit Unit 40 62.5 °C/W 0.6 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 1 VBL1101N www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 Drain-Source Breakdown Voltage Gate-Threshold Voltage 4 ± 100 VDS = 100 V, VGS = 0 V, TJ = 175 °C a On-State Drain Current Drain-Source On-State Resistancea VDS = ≥ 5 V, VGS = 10 V ID(on) RDS(on) VGS = 10 V, ID = 30 A 0.010 0.023 VGS = 10 V, ID = 30 A, TJ = 125 °C 0.020 VDS = 15 V, ID = 30 A µA A VGS = 4.5 V, ID = 20 A gfs nA 250 120 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea V Ω 0.030 25 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec VGS = 0 V, VDS = 25 V, f = 1 MHz Gate-Source Charge c Gate-Drain Charge Turn-On Delay Time c c Qgs c Fall Timec pF 105 VDS = 50 V, VGS = 10 V, ID = 85 A 160 nC 17 Qgd 23 td(on) 12 25 90 135 55 85 130 195 tr Rise Time 665 265 Qg c Turn-Off DelayTime 6550 td(off) VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 °C b IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Qrr A IF = 85 A, VGS = 0 V 1.0 1.5 V 85 140 ns IF = 50 A, dI/dt = 100 A/µs 4.5 7 A 0.35 µC trr IRM(REC) ns 0.17 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 VBL1101N www.VBsemi.com TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 200 250 VGS = 10 V thru 6 V 5V 200 I D - Drain Current (A) I D - Drain Current (A) 150 150 100 4V 100 TC = 125 °C 50 50 - 55 °C 25 °C 3V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 250 6 0.020 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 200 25 °C 150 125 °C 100 50 0 0 20 40 60 80 0.015 VGS = 6V VGS = 10 V 0.010 0.005 0.000 100 0 20 40 80 100 120 ID - Drain Current (A) ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 20 VGS - Gate-to-Source Voltage (V) 10 000 8000 C - Capacitance (pF) 60 Ciss 6000 4000 2000 Crss VDS = 50 V ID = 85 A 16 12 8 4 Coss 0 0 0 15 30 45 60 VDS - Drain-to-Source Voltage (V) Capacitance 75 0 50 100 150 200 Qg - Total Gate Charge (nC) Gate Charge 3 VBL1101N www.VBsemi.com TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.5 100 VGS = 10 V ID = 30 A I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 140 130 100 IAV (A) at T A = 25 °C VDS (V) I Dav (a) 0.3 TJ - Junction Temperature (°C) 10 IAV (A) at T A = 150 °C ID = 250 µA 120 110 1 100 0.1 0.00001 4 0.0001 0.001 0.01 0.1 1 90 - 50 - 25 0 25 50 75 100 125 tin (s) TJ - Junction Temperature (°C) Avalanche Current vs. Time TJ - Drain-Source Breakdown vs. Junction-Temperature 150 175 VBL1101N www.VBsemi.com THERMAL RATINGS 100 1000 10 µs 100 I D - Drain Current (A) I D - Drain Current (A) 80 60 40 100 µs 10 Limited by R DS(on)* 1 ms 10 ms 100 ms, DC 1 20 0 0 25 50 75 100 125 150 175 0.1 0.1 TC = 25 °C Single Pulse 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified TC - Case Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5 VBL1101N www.VBsemi.com TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 6 VBL1101N www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A.
VBL1101N 价格&库存

很抱歉,暂时无法提供与“VBL1101N”相匹配的价格&库存,您可以联系我们找货

免费人工找货