VBC8338

VBC8338 www.VBsemi.com N- and P-Channel 30-V (D-S) MOSFET N-CH BVDSS ▼ Simple Drive Requirement ▼ Lower Gate Charge RDS(ON) ▼ Fast Switching Performance ID 22mΩ 6.2A P-CH BVDSS ▼ RoHS Compliant & Halogen-Free 30V -30V RDS(ON) 45mΩ ID -5.0A D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Units P-channel 30 -30 V +20 +20 V 3 6.2 -5.0 A 3 5.0 -4.0 A 20 -18 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 1.35 W Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value Unit 90 ℃/W 1 VBC8338 www.VBsemi.com o N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 30 - - V VGS=10V, ID=6A - 22 - mΩ VGS=4.5V, ID=4A - 30 - mΩ VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=6A - 14 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=6A - 7 11 nC Qgs Gate-Source Charge VDS=15V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC td(on) Turn-on Delay Time VDS=15V - 6 - ns tr Rise Time ID=1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω - 17 - ns tf Fall Time VGS=10V - 4 - ns Ciss Input Capacitance VGS=0V - 550 - pF Coss Output Capacitance VDS=15V - 105 - pF Crss Rg Reverse Transfer Capacitance f=1.0MHz - 90 - pF Gate Resistance f=1.0MHz - 1.7 - Ω Min. Typ. Source-Drain Diode Symbol 2 Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=1.2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=6A, VGS=0V, - 15 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 7 - nC VBC8338 www.VBsemi.com o P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -30 - - V VGS=-10V, ID=-5A - 45 - mΩ VGS=-4.5V, ID=-3A - 66 - mΩ VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5A - 18 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-5A - 14.4 23 nC Qgs Gate-Source Charge VDS=-15V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC td(on) Turn-on Delay Time VDS=-15V - 7 - ns tr Rise Time ID=-1A - 6.5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 36 - ns tf Fall Time VGS=-10V - 28 - ns Ciss Input Capacitance VGS=0V - 960 - pF Coss Output Capacitance VDS=-15V - 190 - pF Crss Rg Reverse Transfer Capacitance f=1.0MHz - 170 - pF Gate Resistance f=1.0MHz - 6 - Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.2A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-5A, VGS=0V, - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board , t