VBC7P2216

VBC7P2216 www.VBsemi.com P-Channel 20-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) ID (A) 0.012 at V GS = - 4.5 V - 9.0 0.015 at V GS = - 2.5 V - 7.8 0.020 at VGS = - 1.8 V - 6.0 • Halogen-free • TrenchFET® Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7 must be tied common. 6 S 5 D Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD -7.8 - 6.8 -5.8 - 30 - 1.35 - 0.95 1.5 1.05 1.0 0.67 TJ, Tstg Operating Junction and Storage Temperature Range V - 9.0 IDM Pulsed Drain Current (10 µs Pulse Width) Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 65 83 100 120 43 52 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. 1 VBC7P2216 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. - 0.45 - Max. Unit Static VGS(th) VDS = VGS, ID = - 450 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 8.0 A 0.010 RDS(on) VGS = - 2.5 V, ID = - 7.0 A 0.012 VGS = - 1.8 V, ID = - 5.8 A 0.016 gfs VDS = - 5 V, ID = - 8.0 A 44 VSD IS = - 1.5 A, VGS = 0 V - 0.56 - 1.1 46 70 Gate Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VDS = - 20 V, VGS = 0 V VDS = -20V, V GS = 1.0 V ± 100 nA -1 0 V, TJ = 70 °C - 25 - 20 µA A Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) VDS = - 10 V, VGS = - 4.5 V, ID = - 8.0 A 15.5 VDD = - 10 V, R L=6Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 5 IF = - 1.5 A, di/dt = 100 A/µs 45 70 85 130 220 400 155 235 140 210 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 thru 2 V 24 24 I D - Drain Current (A) I D - Drain Current (A) 1.5 V 18 12 6 18 12 6 25 °C 1V 0 0 2 1 2 3 4 TC = 125 °C 5 0 0.0 0.5 - 55 °C 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 VBC7P2216 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6000 5000 0.024 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.030 VGS = 1.8 V 0.018 VGS = 2.5 V 0.012 VGS = 4.5 V 0.006 Ciss 4000 3000 Coss 2000 Crss 1000 0.000 0 0 6 12 18 24 30 0 2 ID - Drain Current (A) 4 8 10 12 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 1.4 6 VGS = 4.5 V ID = 8 A VDS = 6 V ID = 8 A 5 1.2 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 6 4 3 2 1.0 0.8 1 0.6 - 50 0 0 12 24 36 48 60 - 25 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.06 30 10 0.05 TJ = 150 °C 1 RDS(on) - On-Resistance (Ω) I S - Source Current (A) 0 TJ = 25 °C 0.04 ID = 8 A 0.03 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 1.2 0 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 3 VBC7P2216 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 40 0.2 ID = 250 µA 30 Power (W) V GS(th) Variance (V) 0.3 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10-2 150 10-1 1 10 100 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* I D - Drain Current (A) 10 10 ms 1 100 ms 1s 0.1 10 s DC TC = 25 °C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 100 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 Normalized Thermal Transient Impedance, Junction-to-Ambient 4 100 600 VBC7P2216 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 5 VBC7P2216 www.VBsemi.com TSSOP: 8ĆLEAD JEDEC Part Number: MO-153 R 0.10 Corners) A1 A A2 D 6 e 0.25 (Gage Plane) E1 MILLIMETERS E C L B R 0.10 (4 Corners) oK1 L1 Dim A A1 A2 B C D E E1 e L L1 Y oK1 Min Nom Max – – 1.20 0.05 0.10 0.15 0.80 1.00 1.05 0.19 0.28 0.30 – 0.127 – 2.90 3.00 3.10 6.20 6.40 6.60 4.30 4.40 4.50 – 0.65 – 0.45 0.60 0.75 0.90 1.00 1.10 – – 0.10 0_ 3_ 6_ ECN: S-03946—Rev. G, 09-Jul-01 DWG: 5844 VBC7P2216 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR TSSOP-8 0.092 (2.337) 0.026 (4.623) 0.182 0.040 (1.016) 0.262 (6.655) (0.660) 0.014 0.012 (0.356) (0.305) Recommended Minimum Pads Dimensions in Inches/(mm) 7 VBC7P2216 Disclaimer www.VBsemi.com All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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