VBC6P3033
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Dual P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) (Ω)
ID (A)
0.036 at V GS = - 10 V
- 5.2
0.055 at V GS = - 4.5 V
- 4.2
• Halogen-free
• TrenchFET® Power MOSFETs
RoHS
COMPLIANT
APPLICATIONS
• Load Switch
• Battery Switch
S1
S2
TSSOP-8
D1
1
S1
2
S1
3
G1
4
G1
8 D2
7 S2
G2
6 S2
5 G2
Top View
D1
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
- 4.1
- 4.2
- 3.6
- 30
- 1.0
- 0.70
1.14
0.83
0.73
0.53
TJ, Tstg
Operating Junction and Storage Temperature Range
V
- 5.2
IDM
Pulsed Drain Current (10 µs Pulse Width)
Maximum Power Dissipationa
ID
Unit
- 55 to 150
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Symbol
t ≤ 10 s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
86
110
124
150
52
65
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
1
VBC6P3033
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
- 1.0
Typ.
Max.
Unit
Static
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Gate Threshold Voltage
Drain-Source On-State Resistancea
Diode Forward Voltage
a
V
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≥ - 5 V, VGS = - 10 V
RDS(on)
Forward Transconductancea
- 3.0
± 100
µA
- 15
A
VGS = - 10 V, ID = - 4.7 A
0.036
VGS = - 4.5 V, ID = - 3.8 A
0.055
Ω
gfs
VDS = - 15 V, ID = - 4.7 A
14
VSD
IS = - 1.0 A, VGS = 0 V
- 0.74
- 1.1
13
20
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = - 15 V, VGS = - 4.5 V, ID = - 4.7 A
3
f = 1.0 MHz
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, RG = 6 Ω
tr
td(off)
Turn-Off Delay Time
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Ω
4.6
td(on)
Turn-On Delay Time
Rise Time
nC
5.8
IF = - 1.0 A, dI/dt = 100 A/µs
13
20
14
22
52
80
26
40
40
60
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
TC = - 55 °C
VGS = 10 thru 5 V
24
I D - Drain Current (A)
I D - Drain Current (A)
25 °C
4V
24
18
12
6
125 °C
18
12
6
3V
0
0
2
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
4.0
4.5
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0.11
2000
0.09
1600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.07
VGS = 4.5 V
0.05
VGS = 10 V
1200
Ciss
800
0.03
400
0.01
0
Coss
Crss
0
5
10
15
20
25
30
0
5
10
ID - Drain Current (A)
20
25
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.60
6
VGS = 10 V
ID = 4.7 A
VDS = 15 V
ID = 4.7 A
5
4
3
2
(Normalized)
1.40
RDS(on) - On-Resistance
V GS - Gate-to-Source Voltage (V)
15
1.20
1.00
0.80
1
0.60
- 50
0
0
3
6
9
12
15
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.15
30
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
10
TJ = 25 °C
1
0.1
0.0
0.12
ID = 4.7 A
0.09
0.06
0.03
0.00
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.5
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3
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0.6
100
0.4
80
ID = 250 µA
Power (W)
V GS(th) Variance (V)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.2
0.0
60
40
20
- 0.2
- 0.4
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R DS (on)*
I D - Drain Current (A)
10
1 ms
10 ms
1
100 ms
0.1
0.01
0.1
TC = 25 °C
Single Pulse
1s
10 s
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 124 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
4
100
600
VBC6P3033
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
5
VBC6P3033
www.VBsemi.com
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