SS120G

SS12G THRU SS120G Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0A PINNING Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications PIN DESCRIPTION 1 Cathode 2 Anode 1 MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 70mg / 0.0025oz 2 Top View Marking Code: SS12 ~ SS120 Simplified outline SMA and symbol Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS12 G SS14 G SS16 G SS18 G SS110 G SS112 G SS115 G SS120 G Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current I F(AV) 1.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 30 A Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range VF 0.55 0.2 5 110 80 0.90 V 0.1 2 mA pF RθJA 90 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C （1）Measured at 1MHz and applied reverse voltage of 4 V D.C. （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. REV.08 0.85 0.3 10 IR Cj 0.70 1 of 3 SS12G THRU SS120G Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve Average Forward Current (A) 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 10 4 T J =75°C 10 2 SS12G /SS14G SS16G -SS120G 10 1 T J =25°C 10 0 0 Case Temperature (°C) 80 100 500 Junction Capacitance ( pF) 20 10 1.0 SS12G/SS14G SS16G /SS18G SS110G /SS112G SS115G /SS120G 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T J =25°C 200 100 50 SS12G /SS14G 20 SS16G -SS120G 10 1.8 0.1 Transient Thermal Impedance（ °C /W） 36 30 24 18 12 06 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 1 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) 60 Fig.4 Typical Junction Capacitance Instaneous Forward Voltage (V) 100 Number of Cycles at 60Hz REV.08 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) T J =100°C 10 3 Fig.6- Typical Transient Thermal Impedance 100 10 1 0.01 0.1 1 10 t, Pulse Duration（sec） 2 of 3 100 SS12G THRU SS120G PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c a VM e A HE g e E A D E HE c e g max 2.2 4.5 2.7 5.2 0.31 1.6 1.5 min 1.9 4.0 2.3 4.7 0.15 1.3 0.9 max 87 181 106 205 12 63 59 min 75 157 91 185 6 51 35 UNIT mm mil g e A D The recommended mounting pad size a 0.3 12 Marking Type number 2.2 (86) mm Unit ： (mil) REV.08 SS12G SS12 SS14G SS14 1.8 (71) 1.8 (71) 1.8 (71) Marking code 3 of 3 SS16G SS16 SS18G SS18 SS110G SS110 SS112G SS112 SS115G SS115 SS120G SS120