ES1EF

ES1AF THRU ES1JF Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V PINNING Forward Current – 1 A PIN FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Juntion • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives DESCRIPTION 1 Cathode 2 Anode 1 2 Top View Marking Code: ES1AF~ES1JF: ES1A~ES1J Simplified outline SMAF and symbol MECHANICAL DATA • Case: SMAF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 27mg 0.00086oz Absolute Maximum Ratings and Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T L = 100 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 25 A Maximum Forward Voltage at 1A VF Parameter Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta =125 °C 1.25 1 1.7 V IR 5 100 μA Typical Junction Capacitance at V R =4V, f=1MHz Cj 10 pF Maximum Reverse Recovery Time at I F =0.5A, I R =1A, I rr =0.25A t rr 35 ns T j , T stg -55 ~ +150 °C Operating and Storage Temperature Range REV.08 1 of 3 ES1AF THRU ES1JF Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 1.2 300 1.0 100 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 Single phase half wave resistive or inductive P.C.B mounted on 0.315×0. 315"(8.0×8. 0mm ) pad areas 0.2 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Lead Temperature (°C) 60 80 100 Fig.5 Typical Junction Capacitance 10 14 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 40 % of PIV.VOLTS Fig.4 Typical Forward Characteristics ES1AF 1.0 ES1EF ES1JF 0.1 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 12 10 8 6 4 2 0.1 Instaneous Forward Voltage (V) REV.08 20 T J =25°C f = 1.0MHz V sig = 50mV p-p 1 10 Reverse Voltage (V) 2 of 3 100 ES1AF THRU ES1JF PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMAF ∠ALL ROUND C A ∠ALL ROUND D E A V M g g pad e E A pad HE Top View A C D E e g HE max 1.1 0.20 3.7 2.7 1.6 1.2 4.9 min 0.9 0.12 3.3 2.4 1.3 0.8 4.4 max 43 7.9 146 106 63 47 193 min 35 4.7 130 94 51 31 173 UNIT mm mil Bottom View 7° The recommended mounting pad size 2.2( 86) 1.6(63) 1.8(71) 1.6(63) Unit：mm(mil) REV.08 ∠ 3 of 3