VBE1106N

VBE1106N www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.055 at VGS = 10 V 100 Qg (Typ.) • 100 % UIS tested 25 0.057 at VGS = 4.5 V 25 0.070 at VGS = 2.5 V 18 • TrenchFET® power MOSFET 21nC APPLICATIONS • Primary side switch D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C Continuous Source-Drain Diode Current 20 ID 12 b, c 10 b, c Avalanche Current Pulse Single Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 50 e IS 6.9 b, c IAS 33 EAS 55 mJ 83 58 PD W 8.3 b, c 5.8 b, c TA = 70 °C Operating Junction and Storage Temperature Range A 75 TC = 25 °C Maximum Power Dissipation V 25 TA = 70 °C Pulsed Drain Current UNIT TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b, d Maximum Junction-to-Case SYMBOL TYPICAL MAXIMUM t ≤ 10 s RthJA 15 18 Steady State RthJC 1.5 1.8 UNIT °C/W Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 50 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. 1 Downloaded From Oneyac.com VBE1106N www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 100 - - - V 165 - - -11 - 1.2 1.6 V - ± 100 nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA 0.8 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a Dynamic RDS(on) gfs mV/°C VDS = 100 V, VGS = 0 V - - 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C - - 10 VDS ≥ 5 V, VGS = 10 V 25 - - VGS = 10 V, ID =12A - 0.055 0.057 0.060 0.062 Ω - 25 - S - 1800 - - 180 - VGS =4.5 V, ID =8A VDS = 15 V, ID = 12 A μA A b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 60 - Total Gate Charge Qg - 21 32 Gate-Source Charge Qgs - 10 - Gate-Drain Charge Qgd - 9 - Gate Resistance Rg - 1.5 - td(on) - 10 15 tr - 10 15 - 15 25 - 10 15 - - 50 - - 40 - 0.8 1.2 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 12 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 10 V, ID = 12 A f = 1 MHz td(off) VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current a ISM Body Diode Voltage VSD TC = 25 °C IS = 10 A A V Body Diode Reverse Recovery Time trr - 50 75 ns Body Diode Reverse Recovery Charge Qrr - 100 150 nC Reverse Recovery Fall Time ta - 38 - Reverse Recovery Rise Time tb - 12 - IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C ns Note a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Downloaded From Oneyac.com VBE1106N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 10 TC = - 55 °C 8 30 VGS = 4 . 5 V 20 10 I D - Drain Current (A) I D - Drain Current (A) VGS = 10 V thru 7 V VGS = 2 . 5 V TC = 25 °C 6 4 TC = 125 °C 2 VGS = 1 . 5 V 0 0.0 0 0.5 1.0 1.5 2.0 2.5 0.4 3.0 1.6 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.070 2.4 2500 Ciss 2000 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.2 0.8 VDS - Drain-to-Source Voltage (V) 0.060 VGS = 10 V 0.050 1500 1000 Coss 500 Crss 0.040 0 0 6 24 18 12 ID - Drain Current (A) 0 20 On-Resistance vs. Drain Current 60 80 100 Capacitance 10 R DS(on) - On-Resistance (Normalized) 2.2 ID = 12 A VGS - Gate-to-Source Voltage (V) 40 VDS - Drain-to-Source Voltage (V) VDS = 50 V 8 6 VDS = 80 V 4 2 0 0 5 10 15 20 25 30 35 ID = 12 A 2.0 VGS = 10 V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 - 50 Qg - Total Gate Charge (nC) - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 Gate Charge On-Resistance vs. Junction Temperature 175 3 Downloaded From Oneyac.com VBE1106N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.08 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 12 A TJ = 150 °C 10 TJ = 25 °C 1 0.0 0.07 TA = 125 °C 0.06 TA = 25 °C 0.05 0.04 0.2 0.4 0.6 0.8 1.0 1.2 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage RDS(on) vs. VGS vs. Temperature 7 200 4.5 4.0 ID = 250 µA 150 Power (W) V GS(th) (V) 3.5 3.0 100 2.5 50 2.0 1.5 - 50 - 25 0 25 50 75 100 125 150 0 0.001 175 0.01 0.1 TJ - Temperature (°C) Threshold Voltage 10 100 Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* 100 µs 10 I D - Drain Current (A) 1 Time (s) 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area 4 Downloaded From Oneyac.com 1000 VBE1106N www.VBsemi.com 40 80 30 60 Power Dissipation (W) I D - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 10 40 20 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power Derating 125 150 Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 Downloaded From Oneyac.com VBE1106N www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 40 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 Downloaded From Oneyac.com 1 10 VBE1106N www.VBsemi.com TO-252AA Case Outline E MILLIMETERS A C2 e b2 D1 e1 E1 L gage plane height (0.5 mm) L4 b L5 H D L3 b3 C A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 0.024 C 0.46 0.61 0.018 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 4.10 - 0.161 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC e1 0.090 BSC 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.01 1.52 0.040 0.060 ECN: T16-0236-Rev. P, 16-May-16 DWG: 5347 Notes • Dimension L3 is for reference only. 7 Downloaded From Oneyac.com VBE1106N www.VBsemi.com RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8 Downloaded From Oneyac.com VBE1106N www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.com) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. Downloaded From Oneyac.com 单击下面可查看定价，库存，交付和生命周期等信息 >>VBsemi(台湾微碧) Downloaded From Oneyac.com