PMBT3946VPN,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor Rev. 01 — 31 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number PMBT3946VPN Package NXP JEITA NPN/NPN complement SOT666 - PMBT3904VS PNP/PNP complement PMBT3906VS 1.2 Features n Double general-purpose switching transistor n Board-space reduction n Ultra small and flat lead SMD plastic package 1.3 Applications n General-purpose switching and amplification 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit - - 40 V - - 200 mA Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage IC collector current open base TR1 (NPN) hFE DC current gain VCE = 1 V; IC = 10 mA 100 180 300 DC current gain VCE = −1 V; IC = −10 mA 100 180 300 TR2 (PNP) hFE PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 collector TR2 4 emitter TR2 5 base TR2 6 collector TR1 Simplified outline 6 5 Graphic symbol 6 4 5 4 TR2 TR1 1 2 3 1 2 3 sym019 3. Ordering information Table 4. Ordering information Type number PMBT3946VPN Package Name Description Version - plastic surface-mounted package; 6 leads SOT666 4. Marking Table 5. Marking codes Type number Marking code PMBT3946VPN ZE 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit collector-base voltage open emitter - 60 V collector-base voltage open emitter - −40 V TR1 (NPN) VCBO TR2 (PNP) VCBO Per transistor; for the PNP transistor with negative polarity VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 6 V IC collector current - 200 mA ICM peak collector current single pulse; tp ≤ 1 ms - 200 mA IBM peak base current single pulse; tp ≤ 1 ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C - 240 mW PMBT3946VPN_1 Product data sheet [1][2] © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 2 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Ptot total power dissipation Tamb ≤ 25 °C - 360 mW Tj Tamb junction temperature - 150 °C ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C Per device [1][2] [1] Reflow soldering is the only recommended soldering method. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 006aab604 400 Ptot (mW) 300 200 100 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 1. Per device: Power derating curves SOT666 6. Thermal characteristics Table 7. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit - - 521 K/W - - 100 K/W - - 347 K/W Per transistor Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point in free air [1][2] Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] Reflow soldering is the only recommended soldering method. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMBT3946VPN_1 Product data sheet [1][2] © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 3 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 006aab605 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit TR1 (NPN) ICBO collector-base cut-off VCB = 30 V; IE = 0 A current - - 50 nA IEBO emitter-base cut-off current VEB = 6 V; IC = 0 A - - 50 nA hFE DC current gain VCE = 1 V IC = 0.1 mA 60 180 - IC = 1 mA 80 180 - IC = 10 mA 100 180 300 IC = 50 mA 60 105 - IC = 100 mA VCEsat VBEsat 30 50 - collector-emitter saturation voltage IC = 10 mA; IB = 1 mA - 75 200 mV IC = 50 mA; IB = 5 mA - 120 300 mV base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 750 850 mV IC = 50 mA; IB = 5 mA - 850 950 mV PMBT3946VPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 4 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit td delay time - - 35 ns tr rise time - - 35 ns ton turn-on time VCC = 3 V; IC = 10 mA; IBon = 1 mA; IBoff = −1 mA - - 70 ns ts storage time - - 200 ns tf fall time - - 50 ns toff turn-off time - - 250 ns Cc collector capacitance VCB = 5 V; IE = ie = 0 A; f = 1 MHz - - 4 pF Ce emitter capacitance VEB = 500 mV; IC = ic = 0 A; f = 1 MHz - - 8 pF fT transition frequency VCE = 20 V; IC = 10 mA; f = 100 MHz 300 - - MHz NF noise figure VCE = 5 V; IC = 100 µA; RS = 1 kΩ; f = 10 Hz to 15.7 kHz - - 5 dB - - −50 nA - - −50 nA IC = −0.1 mA 60 180 - IC = −1 mA 80 180 - IC = −10 mA 100 180 300 IC = −50 mA 60 130 - IC = −100 mA 30 50 - TR2 (PNP) ICBO collector-base cut-off VCB = −30 V; IE = 0 A current IEBO emitter-base cut-off current VEB = −6 V; IC = 0 A hFE DC current gain VCE = −1 V VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IC = −10 mA; IB = −1 mA - −100 −250 mV IC = −50 mA; IB = −5 mA - −165 −400 mV IC = −10 mA; IB = −1 mA - −750 −850 mV IC = −50 mA; IB = −5 mA - −850 −950 mV VCC = −3 V; IC = −10 mA; IBon = −1 mA; IBoff = 1 mA - - 35 ns - - 35 ns - - 70 ns - - 225 ns td delay time tr rise time ton turn-on time ts storage time tf fall time - - 75 ns toff turn-off time - - 300 ns Cc collector capacitance VCB = −5 V; IE = ie = 0 A; f = 1 MHz - - 4.5 pF PMBT3946VPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 5 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Ce emitter capacitance VEB = −500 mV; IC = ic = 0 A; f = 1 MHz - - 10 pF fT transition frequency VCE = −20 V; IC = −10 mA; f = 100 MHz 250 - - MHz NF noise figure VCE = −5 V; IC = −100 µA; RS = 1 kΩ; f = 10 Hz to 15.7 kHz - - 4 dB 006aab115 600 006aab116 0.20 IB (mA) = 5.0 4.5 4.0 3.5 3.0 2.5 IC (A) hFE 0.15 400 2.0 (1) 1.5 1.0 0.10 0.5 (2) 200 0.05 (3) 0 10−1 1 10 102 0.0 103 0 2 IC (mA) 4 6 8 10 VCE (V) Tamb = 25 °C VCE = 1 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 4. TR1 (NPN): Collector current as a function of collector-emitter voltage; typical values PMBT3946VPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 6 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 006aab117 1.2 006aab118 1.3 VBE (V) VBEsat (V) (1) 0.8 (1) 0.9 (2) (2) (3) 0.4 (3) 0.5 0 10−1 1 10 102 0.1 10−1 103 1 VCE = 1 V IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Fig 5. 10 102 103 IC (mA) IC (mA) TR1 (NPN): Base-emitter voltage as a function of collector current; typical values Fig 6. TR1 (NPN): Base-emitter saturation voltage as a function of collector current; typical values 006aab119 1 VCEsat (V) 10−1 (1) (2) (3) 10−2 10−1 1 10 102 103 IC (mA) IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values PMBT3946VPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 7 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 006aab120 400 hFE (1) 006aab121 −0.3 IB (mA) = −5.0 −4.5 −4.0 −3.5 −3.0 IC (A) 300 −2.5 −2.0 −0.2 −1.5 200 −1.0 (2) −0.1 −0.5 (3) 100 0 −10−1 −1 −10 −102 0 −103 0 −2 −4 −6 IC (mA) VCE = −1 V −8 −10 VCE (V) Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 8. TR2 (PNP): DC current gain as a function of collector current; typical values 006aab123 −1.2 VBE (V) Fig 9. TR2 (PNP): Collector current as a function of collector-emitter voltage; typical values 006aab124 −1.2 VBEsat (V) −1.0 −1.0 (1) (1) −0.8 (2) −0.6 −0.8 (2) −0.6 (3) (3) −0.4 −0.4 −0.2 −10−1 −1 −10 −102 −103 −0.2 −10−1 −1 IC (mA) −102 −103 IC (mA) VCE = −1 V IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Fig 10. TR2 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 11. TR2 (PNP): Base-emitter saturation voltage as a function of collector current; typical values PMBT3946VPN_1 Product data sheet −10 © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 8 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 006aab122 −1 VCEsat (V) (1) −10−1 (2) (3) −10−2 −10−1 −1 −10 −102 −103 IC (mA) IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 12. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values PMBT3946VPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 9 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 8. Test information VBB RB oscilloscope VCC RC Vo (probe) 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VI = 5 V; t = 600 µs; tp = 10 µs; tr = tf ≤ 3 ns R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω VBB = −1.9 V; VCC = 3 V Oscilloscope: input impedance Zi = 50 Ω Fig 13. TR1 (NPN): Test circuit for switching times VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VI = 5 V; t = 600 µs; tp = 10 µs; tr = tf ≤ 3 ns R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω VBB = 1.9 V; VCC = −3 V Oscilloscope: input impedance Zi = 50 Ω Fig 14. TR2 (PNP): Test circuit for switching times PMBT3946VPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 10 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 9. Package outline 1.7 1.5 6 0.6 0.5 5 4 0.3 0.1 1.7 1.5 1.3 1.1 pin 1 index 1 2 3 0.27 0.17 0.5 0.18 0.08 1 Dimensions in mm 04-11-08 Fig 15. Package outline SOT666 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description PMBT3946VPN SOT666 [1] 4000 8000 2 mm pitch, 8 mm tape and reel - -315 4 mm pitch, 8 mm tape and reel -115 - For further information and the availability of packing methods, see Section 14. PMBT3946VPN_1 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 11 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 11. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 16. Reflow soldering footprint SOT666 PMBT3946VPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 12 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PMBT3946VPN_1 20090831 Product data sheet - - PMBT3946VPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 13 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMBT3946VPN_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 31 August 2009 14 of 15 PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 31 August 2009 Document identifier: PMBT3946VPN_1