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SMDA33CDN

SMDA33CDN

  • 厂商:

    LEIDITECH(雷卯电子)

  • 封装:

    DFN1006

  • 描述:

    雷卯 DFN1006 185W 3.3V

  • 数据手册
  • 价格&库存
SMDA33CDN 数据手册
SMDA33CDN LOW CLAMPING VOLTAGE TVS DIODE Features ● 185 Watts Peak Pulse Power per Line (tp=8/20µs) ● Protects One Bidirectional I/O Line ● Low Clamping Voltage ● Working Voltages : 3.3V ● Low Leakage Current ● IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) ● IEC61000-4-4 (EFT) 40A (5/50ηs) ● IEC61000-4-5 (Lighting) 30A (8/20μs) Dimensions DFN1006DN Applications ● Cell Phone Handsets and Accessories ● Microprocessor based equipment ● Personal Digital Assistants (PDA’s) ● Notebooks, Desktops, and Servers ● Portable Instrumentation ● Peripherals ● Pagers Pin Configuration Mechanical Characteristics ● DFN1006DN (1.0x0.6mm) Package ● Molding Compound Flammability Rating : UL 94V-O ● Weight 0.5 Millgrams (Approximate) ● Reel Size : 7 inch ● Lead Finish : Lead Free Absolute Maximum Ratings(Tamb=25°C unless otherwise specified) Parameter Peak Pulse Power (8/20µs) ESD per IEC 61000−4−2 (Air) Symbol Value Ppp 185 VESD ± 30 Unit W Kv ± 30 ESD per IEC 61000−4−2 (Contact) Operating Temperature Range TJ -55 to +150 ℃ Storage Temperature Range TSTJ -55 to +150 ℃ Rev : 01.06.2015 1/5 www.leiditech.com SMDA33CDN Electrical Characteristics(TA=25°C unless otherwise specified) Vc Part Number SMDA33CDN Device Marking VRWM (V) VBR (V) IT (mA) VC @1A C3 3.3 3.6 1 5 Characteristic Curves Figure 1. 8 x 20μs Waveform (Max) 12 Vc (@A) 20 (Max) 15 (@A) 30 IR μA (Max) C (Pf) (Typ.) 0.1 40 Figure 2. Power Derating Curve Figure 3. Clamping Voltage vs. Peak Pulse Current (tp=8/20us) Rev : 01.06.2015 2/5 www.leiditech.com SMDA33CDN TYPIC CHARACTERISTICS Typic Breakdown Voltage vs. Temperature Typic Reverse Leakage vs. Temperature Rev : 01.06.2015 3/5 www.leiditech.com SMDA33CDN TRANSMISSION LINE PULSE (TLP) Transmission Line Pulse (TLP) is a measurement technique used in the Electrostatic Discharge (ESD) arena to characterize performance attributes of devices under ESD stresses. TLP is able to obtain current versus voltage (I−V) curves in which each data point is obtained with a 100 ns long pulse, with currents up to 40 A. TLP was first used in the ESD field to study human body model (HBM) in integrated circuits, but it is an equally valid tool in the field of system level ESD. The applicability of TLP to system level ESD is illustrated in Figure 1, which compares an 8 kV IEC 61000−4−2 current waveform with TLP current pulses of 8 and 16 A. The current levels and time duration for the pulses are similar and the initial rise time for the TLP pulse is comparable to the rise time of the IEC 61000−4−2’s initial current spike. This application note will give a basic introduction to TLP measurements and explain the datasheet parameters extracted from TLP for SDI Technology’s protection products. Rev : 01.06.2015 4/5 www.leiditech.com SMDA33CDN DFN1006DN PACKAGE OUTLINE & DIMENSIONS Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : 01.06.2015 5/5 www.leiditech.com
SMDA33CDN 价格&库存

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