BCV49,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BCV29; BCV49 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Dec 06 NXP Semiconductors Product data sheet NPN Darlington transistors BCV29; BCV49 FEATURES PINNING • High current (max. 500 mA) PIN DESCRIPTION • Low voltage (max. 60 V) 1 emitter • High DC current gain (min. 20 000). 2 collector 3 base APPLICATIONS • Preamplifier input applications. 3 2 DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48. TR1 TR2 MARKING 3 TYPE NUMBER 2 1 1 sym087 MARKING CODE BCV29 EF BCV49 EG Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER BCV29 BCV49 2004 Dec 06 NAME DESCRIPTION VERSION SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 2 NXP Semiconductors Product data sheet NPN Darlington transistors BCV29; BCV49 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO PARAMETER CONDITIONS collector-base voltage MAX. UNIT open emitter − 40 V − 80 V BCV29 − 30 V BCV49 − 60 V BCV29 BCV49 VCES MIN. collector-emitter voltage VBE = 0 V VEBO emitter-base voltage − 10 V IC collector current (DC) − 500 mA ICM peak collector current − 1 A IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1.3 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C open collector Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-a) thermal resistance from junction to ambient Rth(j-s) thermal resistance from junction to soldering point note 1 VALUE UNIT 96 K/W 16 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Dec 06 3 NXP Semiconductors Product data sheet NPN Darlington transistors BCV29; BCV49 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector-base cut-off current BCV29 IE = 0 A; VCB = 30 V − − 100 nA BCV49 IE = 0 A; VCB = 60 V − − 100 nA − − 100 nA IC = 1 mA 4 000 − − IC = 10 mA 10 000 − − IC = 100 mA 20 000 − − IC = 500 mA 4 000 − − IC = 1 mA 2 000 − − IC = 10 mA 4 000 − − IC = 100 mA 10 000 − − IC = 500 mA IEBO emitter-base cut-off current IC = 0 A; VEB = 10 V hFE DC current gain VCE = 5 V; see Fig.2 BCV29 DC current gain BCV49 VCE = 5 V; see Fig.2 2 000 − − VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA − − 1 V VBEsat base-emitter saturation voltage IC = 100 mA; IB = 0.1 mA − − 1.5 V VBEon base-emitter on-state voltage IC = 10 mA; VCE = 5 V − − 1.4 V fT transition frequency IC = 30 mA; VCE = 5 V; f = 100 MHz − 220 − MHz 2004 Dec 06 4 NXP Semiconductors Product data sheet NPN Darlington transistors BCV29; BCV49 MGD837 80000 handbook, full pagewidth hFE 60000 40000 20000 0 10−1 1 10 VCE = 2 V. Fig.2 DC current gain; typical values. 2004 Dec 06 5 102 IC (mA) 103 NXP Semiconductors Product data sheet NPN Darlington transistors BCV29; BCV49 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Dec 06 REFERENCES IEC JEDEC JEITA TO-243 SC-62 6 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet NPN Darlington transistors BCV29; BCV49 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Dec 06 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/06/pp8 Date of release: 2004 Dec 06 Document order number: 9397 750 13863